公开(公告)号：US06998204B2

公开(公告)日：2006-02-14

申请号：US10707009

申请日：2003-11-13

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit

IPC分类号： G01F9/00

CPC分类号： G03F1/30 ,  G03F1/54 ,  G03F1/68

摘要： The invention provides a method of forming a phase shift mask and the resulting phase shift mask. The method forms a non-transparent film on a transparent substrate and patterns an etch stop layer on the non-transparent film. The invention patterns the non-transparent film using the etch stop layer to expose areas of the transparent substrate. Next, the invention forms a mask on the non-transparent film to protect selected areas of the transparent substrate and forms a phase shift oxide on exposed areas of the transparent substrate. Subsequently, the mask is removed and the phase shift oxide is polished down to the etch stop layer, after which the etch stop layer is removed.

摘要翻译： 本发明提供一种形成相移掩模的方法和所得到的相移掩模。 该方法在透明基板上形成不透明的薄膜，并在非透明薄膜上形成蚀刻停止层。 本发明使用蚀刻停止层来图案化非透明膜以暴露透明基底的区域。 接下来，本发明在非透明膜上形成掩模，以保护透明基板的选定区域，并在透明基板的曝光区域上形成相移氧化物。 随后，去除掩模并将相移氧化物抛光到蚀刻停止层，之后去除蚀刻停止层。

公开(公告)号：US20080165335A1

公开(公告)日：2008-07-10

申请号：US12051572

申请日：2008-03-19

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Peter H. Mitchell

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Peter H. Mitchell

IPC分类号： G03B27/42

CPC分类号： G03F7/70341

摘要： An immersion lithography apparatus and method, and a lithographic optical column structure are disclosed for conducting immersion lithography with at least the projection optics of the optical system and the wafer in different fluids at the same pressure. In particular, an immersion lithography apparatus is provided in which a supercritical fluid is introduced about the wafer, and another fluid, e.g., an inert gas, is introduced to at least the projection optics of the optical system at the same pressure to alleviate the need for a special lens. In addition, the invention includes an immersion lithography apparatus including a chamber filled with a supercritical immersion fluid and enclosing a wafer to be exposed and at least a projection optic component of the optical system.

摘要翻译： 公开了一种浸没式光刻设备和方法以及平版印刷光学柱结构，用于在相同压力下用不同流体中的光学系统和晶片的至少投影光学器件进行浸没光刻。 特别地，提供了一种浸没式光刻设备，其中超临界流体被引入晶片周围，并且另一种流体（例如惰性气体）在相同的压力下被引入光学系统的至少投影光学器件以减轻需要 用于特殊镜头。 此外，本发明包括浸没式光刻设备，其包括填充有超临界浸没流体的腔室并且封装要暴露的晶片和至少光学系统的投影光学部件。

公开(公告)号：US20070296937A1

公开(公告)日：2007-12-27

申请号：US11426458

申请日：2006-06-26

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger ,  Peter H. Mitchell

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger ,  Peter H. Mitchell

IPC分类号： G03B27/42

CPC分类号： G03B27/42 ,  G03F7/70341 ,  G03F7/7085 ,  G03F7/70916

摘要： Embodiments of the invention present a system, method, etc. for illumination light in an immersion lithography stepper for particle or bubble detection. More specifically, embodiments herein provide an immersion lithography expose system comprising a wafer holder for holding a wafer, an immersion liquid for covering the wafer, an immersion head to dispense and contain said immersion liquid, and a light source adapted to lithographically expose a resist on the wafer. The system also comprises a light detector at a first location of the immersion head and a laser source at a second location within said immersion head.

摘要翻译： 本发明的实施例在用于颗粒或气泡检测的浸没式光刻步进机中提供照明光的系统，方法等。 更具体地，本文的实施例提供了浸没式光刻曝光系统，其包括用于保持晶片的晶片保持器，用于覆盖晶片的浸没液体，用于分配和容纳所述浸没液体的浸没头，以及适于光刻曝光抗蚀剂的光源 晶圆。 该系统还包括在浸没头的第一位置处的光检测器和位于所述浸没头内的第二位置处的激光源。

公开(公告)号：US07250347B2

公开(公告)日：2007-07-31

申请号：US10905979

申请日：2005-01-28

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit

IPC分类号： H01L21/336

CPC分类号： H01L29/66772 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/78654

摘要： A method for forming transistors with mutually-aligned double gates. The method includes the steps of (a) providing a wrap-around-gate transistor structure, wherein the wrap-around-gate transistor structure includes (i) semiconductor region, and (ii) a gate electrode region wrapping around the semiconductor region, wherein the gate electrode region is electrically insulated from the semiconductor region by a gate dielectric film; and (b) removing first and second portions of the wrap-around-gate transistor structure so as to form top and bottom gate electrodes from the gate electrode region, wherein the top and bottom gate electrodes are electrically disconnected from each other.

摘要翻译： 一种用于形成具有相互对准的双栅极的晶体管的方法。 该方法包括以下步骤：（a）提供环绕栅极晶体管结构，其中环绕栅极晶体管结构包括（i）半导体区域和（ii）围绕半导体区域包围的栅电极区域，其中 栅电极区域通过栅极电介质膜与半导体区域电绝缘; 以及（b）去除环绕栅极晶体管结构的第一和第二部分，以便从栅极电极区域形成顶部和底部栅电极，其中顶部和底部栅电极彼此电断开。

公开(公告)号：US07385673B2

公开(公告)日：2008-06-10

申请号：US11160156

申请日：2005-06-10

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Peter H. Mitchell

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Peter H. Mitchell

IPC分类号： G03B27/42

CPC分类号： G03F7/70341

摘要： An immersion lithography apparatus and method, and a lithographic optical column structure are disclosed for conducting immersion lithography with at least the projection optics of the optical system and the wafer in different fluids at the same pressure. In particular, an immersion lithography apparatus is provided in which a supercritical fluid is introduced about the wafer, and another fluid, e.g., an inert gas, is introduced to at least the projection optics of the optical system at the same pressure to alleviate the need for a special lens. In addition, the invention includes an immersion lithography apparatus including a chamber filled with a supercritical immersion fluid and enclosing a wafer to be exposed and at least a projection optic component of the optical system.

摘要翻译： 公开了一种浸没式光刻设备和方法以及平版印刷光学柱结构，用于在相同压力下用不同流体中的光学系统和晶片的至少投影光学器件进行浸没光刻。 特别地，提供了一种浸没式光刻设备，其中超临界流体被引入晶片周围，并且另一种流体（例如惰性气体）在相同的压力下被引入光学系统的至少投影光学器件以减轻需要 用于特殊镜头。 此外，本发明包括浸没式光刻设备，其包括填充有超临界浸没流体的腔室并且封装要暴露的晶片和至少光学系统的投影光学部件。

公开(公告)号：US07889317B2

公开(公告)日：2011-02-15

申请号：US12051572

申请日：2008-03-19

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Peter H. Mitchell

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Peter H. Mitchell

IPC分类号： G03B27/42

CPC分类号： G03F7/70341

摘要： An immersion lithography apparatus and method, and a lithographic optical column structure are disclosed for conducting immersion lithography with at least the projection optics of the optical system and the wafer in different fluids at the same pressure. In particular, an immersion lithography apparatus is provided in which a supercritical fluid is introduced about the wafer, and another fluid, e.g., an inert gas, is introduced to at least the projection optics of the optical system at the same pressure to alleviate the need for a special lens. In addition, the invention includes an immersion lithography apparatus including a chamber filled with a supercritical immersion fluid and enclosing a wafer to be exposed and at least a projection optic component of the optical system.

摘要翻译： 公开了一种浸没式光刻设备和方法以及平版印刷光学柱结构，用于在相同压力下用不同流体中的光学系统和晶片的至少投影光学器件进行浸没光刻。 特别地，提供了一种浸没式光刻设备，其中超临界流体被引入晶片周围，并且另一种流体（例如惰性气体）在相同的压力下被引入光学系统的至少投影光学器件以减轻需要 用于特殊镜头。 此外，本发明包括浸没式光刻设备，其包括填充有超临界浸没流体的腔室并且封装要暴露的晶片和至少光学系统的投影光学部件。

公开(公告)号：US07585614B2

公开(公告)日：2009-09-08

申请号：US10711458

申请日：2004-09-20

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit ,  James A. Slinkman

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  Steven J. Holmes ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit ,  James A. Slinkman

IPC分类号： G03F7/00

CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

摘要： A method of patterning which provides images substantially smaller than that possible by lithographic techniques is provided. In the method of the invention, a substrate has a memory layer and a sacrificial layer formed thereon. An image is patterned onto the memory layer by protecting an edge during an etching step using chemical oxide removal (COR) processes, for example. Another edge is memorized in the layer. The sacrificial layer is removed to expose another memorized edge, which is used to define a pattern in an underlying layer.

摘要翻译： 提供了一种通过光刻技术提供显着小于可能的图像的图案化方法。 在本发明的方法中，衬底具有形成在其上的存储层和牺牲层。 例如，通过使用化学氧化物去除（COR）工艺在蚀刻步骤期间保护边缘，将图像图案化到存储层上。 另一个边缘被记住在图层中。 去除牺牲层以露出另一个存储的边缘，其用于在下层中定义图案。

公开(公告)号：US07535016B2

公开(公告)日：2009-05-19

申请号：US10906016

申请日：2005-01-31

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  David V. Horak ,  Charles W. Koburger, III ,  Mark E. Masters ,  Peter H. Mitchell

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  David V. Horak ,  Charles W. Koburger, III ,  Mark E. Masters ,  Peter H. Mitchell

IPC分类号： H01L29/15 ,  H01L51/30

CPC分类号： H01L27/0688 ,  B82Y10/00 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823487 ,  H01L27/0705 ,  H01L27/286 ,  H01L51/0048 ,  H01L51/057 ,  Y10S977/938

摘要： A hybrid semiconductor structure which includes a horizontal semiconductor device and a vertical carbon nanotube transistor, where the vertical carbon nanotube transistor and the horizontal semiconductor device have at least one shared node is provided. The at least one shared node can include, for example, a drain, source or gate electrode of a FET, or an emitter, collector, or base of a bipolar transistor.

摘要翻译： 提供一种混合半导体结构，其包括水平半导体器件和垂直碳纳米管晶体管，其中垂直碳纳米管晶体管和水平半导体器件具有至少一个共享节点。 至少一个共享节点可以包括例如FET的漏极，源极或栅极电极，或双极晶体管的发射极，集电极或基极。

公开(公告)号：US06875685B1

公开(公告)日：2005-04-05

申请号：US10605766

申请日：2003-10-24

申请人： Toshiharu Furukawa ,  Mark C. Hakey ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit ,  James A. Slinkman

发明人： Toshiharu Furukawa ,  Mark C. Hakey ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell ,  Larry A. Nesbit ,  James A. Slinkman

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L29/40

CPC分类号： H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a gas dielectric with support structure on a semiconductor device structure provides low capacitance and adequate support for a conductor of the semiconductor device structure. A conductive structure, such as via or interconnect, is formed in a wing-layer dielectric. A support is then formed that connects to the conductive structure, the support including an area thereunder. The wiring-layer dielectric is then removed from the area to form a gas dielectric.

摘要翻译： 在半导体器件结构上形成具有支撑结构的气体电介质的方法为半导体器件结构的导体提供低电容和足够的支撑。 在翼层电介质中形成诸如通孔或互连的导电结构。 然后形成连接到导电结构的支撑件，支撑件包括其下的区域。 然后从该区域去除布线层电介质以形成气体电介质。

公开(公告)号：US07026259B2

公开(公告)日：2006-04-11

申请号：US10707894

申请日：2004-01-21

申请人： Mark C. Hakey ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell

发明人： Mark C. Hakey ,  David V. Horak ,  Charles W. Koburger, III ,  Peter H. Mitchell

IPC分类号： H01L21/26 ,  G06F17/50 ,  G03B27/42

CPC分类号： G03F7/70341 ,  Y10S438/947

摘要： A liquid-filled balloon may be positioned between a workpiece, such as a semiconductor structure covered with a photoresist, and a lithography light source. The balloon includes a thin membrane that exhibits good optical and physical properties. Liquid contained in the balloon also exhibits good optical properties, including a refractive index higher than that of air. Light from the lithography light source passes through a mask, through a top layer of the balloon membrane, through the contained liquid, through a bottom layer of the balloon membrane, and onto the workpiece where it alters portions of the photoresist. As the liquid has a low absorption and a higher refractive index than air, the liquid-filled balloon system enhances resolution. Thus, the balloon provides optical benefits of liquid immersion without the complications of maintaining a liquid between (and in contact with) a lithographic light source mechanism and workpiece.

摘要翻译： 液体填充的球囊可以位于诸如被光致抗蚀剂覆盖的半导体结构的工件和光刻光源之间。 气球包括显示出良好的光学和物理性质的薄膜。 包含在气囊中的液体也表现出良好的光学性能，包括折射率高于空气的折射率。 来自光刻光源的光通过球囊膜的顶层通过所包含的液体通过球囊膜的底层，并穿过其上改变部分光致抗蚀剂的工件。 由于液体具有比空气低的吸收和较高的折射率，所以充满液体的球囊系统提高了分辨率。 因此，气囊提供液体浸没的光学优点，而没有在平版印刷光源机构和工件之间（并与之接触）之间保持液体的并发症。