发明申请
- 专利标题: Semiconductor device having conductive bumps and fabrication method thereof
- 专利标题(中): 具有导电凸块的半导体器件及其制造方法
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申请号: US12005764申请日: 2007-12-27
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公开(公告)号: US20080169562A1公开(公告)日: 2008-07-17
- 发明人: Chun-Chi Ke , Chien-Ping Huang
- 申请人: Chun-Chi Ke , Chien-Ping Huang
- 申请人地址: TW Taichung
- 专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人地址: TW Taichung
- 优先权: TW095149395 20061228
- 主分类号: H01L23/52
- IPC分类号: H01L23/52 ; H01L21/44
摘要:
A semiconductor device having conductive bumps and a fabrication method thereof are provided. The fabrication method mainly including steps of: providing a semiconductor substrate having a solder pad and a passivation layer formed thereon with a portion of the solder pads exposed from the passivation layer; disposing a first metal layer on the solder pad and a portion of the passivation layer around the solder pad; disposing a covering layer on the first metal layer and the passivation layer, and forming an aperture in the covering layer to expose a portion of the first metal layer, wherein a center of the aperture is deviated from that of the solder pad; deposing a metal pillar on the portion of the first metal layer; and deposing a solder material on an outer surface of the metal pillar for providing a better buffering effect.