摘要:
Proposed is a package structure having a micro-electromechanical (MEMS) element, including a chip having a plurality of electrical connecting pads and a MEMS element formed thereon; a lid disposed on the chip for covering the MEMS element; a stud bump disposed on each of the electrical connecting pads; an encapsulant formed on the chip with part of the stud bumps being exposed from the encapsulant; and a metal conductive layer formed on the encapsulant and connected to the stud bumps. The invention is characterized by completing the packaging process on the wafer directly to enable thinner and cheaper package structures to be fabricated within less time. This invention further provides a method for fabricating the package structure as described above.
摘要:
A semiconductor device having conductive bumps and a fabrication method thereof are provided. The fabrication method mainly including steps of: providing a semiconductor substrate having a solder pad and a passivation layer formed thereon with a portion of the solder pads exposed from the passivation layer; disposing a first metal layer on the solder pad and a portion of the passivation layer around the solder pad; disposing a covering layer on the first metal layer and the passivation layer, and forming an aperture in the covering layer to expose a portion of the first metal layer, wherein a center of the aperture is deviated from that of the solder pad; deposing a metal pillar on the portion of the first metal layer; and deposing a solder material on an outer surface of the metal pillar for providing a better buffering effect.
摘要:
A semiconductor package structure includes: a dielectric layer; a metal layer disposed on the dielectric layer and having a die pad and traces, the traces each including a trace body, a bond pad extending to the periphery of the die pad, and an opposite trace end; metal pillars penetrating the dielectric layer with one ends thereof connecting to the die pad and the trace ends while the other ends thereof protruding from the dielectric layer; a semiconductor chip mounted on the die pad and electrically connected to the bond pads through bonding wires; and an encapsulant covering the semiconductor chip, the bonding wires, the metal layer, and the dielectric layer. The invention is characterized by disposing traces with bond pads close to the die pad to shorten bonding wires and forming metal pillars protruding from the dielectric layer to avoid solder bridging encountered in prior techniques.
摘要:
A semiconductor device and a fabrication method thereof are provided. A semiconductor substrate having a plurality of bonding pads is prepared, and a first passivation layer, a second passivation layer and a metallic layer are successively formed on the semiconductor substrate. A third passivation layer is further applied on the semiconductor substrate and has a plurality of openings for exposing a portion of the metallic layer, wherein each of the openings is shifted in position from a corresponding one of the bonding pads by a distance not exceeding a radius of the bonding pad. A plurality of solder bumps are bonded to the exposed portion of the metallic layer and have a larger contact area with the third passivation layer. This provides better buffer to reduce stress exerted on the solder bumps, thereby preventing problems of cracking and delamination as in the prior art.
摘要:
A semiconductor device and a fabrication method thereof are provided. A semiconductor substrate having a plurality of bonding pads is prepared, and a first passivation layer, a second passivation layer and a metallic layer are successively formed on the semiconductor substrate. A third passivation layer is further applied on the semiconductor substrate and has a plurality of openings for exposing a portion of the metallic layer, wherein each of the openings is shifted in position from a corresponding one of the bonding pads by a distance not exceeding a radius of the bonding pad. A plurality of solder bumps are bonded to the exposed portion of the metallic layer and have a larger contact area with the third passivation layer. This provides better buffer to reduce stress exerted on the solder bumps, thereby preventing problems of cracking and delamination as in the prior art.
摘要:
A fabrication method of under bump metallurgy (UBM) structure is provided. A blocking layer is applied over a surface of a semiconductor element formed with at least one bond pad and a passivation layer thereon. The passivation layer covers the semiconductor element and exposes the bond pad, and the blocking layer covers the bond pad and the passivation layer. The blocking layer is formed with at least one opening at a position corresponding to the bond pad. Metallic layers are formed on a surface of the blocking layer and at the opening. The metallic layers are patterned to form a UBM structure at the opening corresponding to the bond pad. Then the blocking layer is removed. The blocking layer can separate the metallic layers for forming the UBM structure from the passivation layer to prevent metallic residues of the UBM structure from being left on the passivation layer.
摘要:
A semiconductor device and a fabrication method thereof are provided. A first passivation layer and a second passivation layer are applied on a semiconductor substrate having at least one bond pad, with the bond pad being exposed. A first metallic layer is formed on the second passivation layer and electrically connected to the bond pad. A third passivation layer is applied on the first metallic layer and exposes a portion of the first metallic layer. A second metallic layer is formed on the third passivation layer and electrically connected to the exposed portion of the first metallic layer. A fourth passivation layer is applied on the second metallic layer and has an opening corresponding in position to the bond pad, allowing a portion of the second metallic layer to be exposed via the opening, such that a solder bump is formed on the exposed portion of the second metallic layer.
摘要:
An EMI shielding package structure includes a substrate unit having a first surface with a die mounting area and a second surfaces opposite to the first surface, metallic pillars formed on the first surface, a chip mounted on and electrically connected to the die-mounting area, an encapsulant covering the chip and the first surface while exposing a portion of each of the metallic pillars from the encapsulant, and a shielding film enclosing the encapsulant and electrically connecting to the metallic pillars. A fabrication method of the above structure by two cutting processes is further provided. The first cutting process forms grooves by cutting the encapsulant. After a shielding film is formed in the grooves and electrically connected to the metallic pillars, the complete package structure is formed by the second cutting process, thereby simplifying the fabrication process while overcoming inferior grounding of the shielding film as encountered in prior techniques.
摘要:
A package structure having an MEMS element is provided, which includes: a protection layer having openings formed therein; conductors formed in the openings, respectively; conductive pads formed on the protection layer and the conductors; a MEMS chip disposed on the conductive pads; and an encapsulant formed on the protection layer for encapsulating the MEMS chip. By disposing the MEMS chip directly on the protection layer to dispense with the need for a carrier, such as a wafer or a circuit board that would undesirably add to the thickness, the present invention reduces the overall thickness of the package to thereby achieve miniaturization.
摘要:
A semiconductor package structure includes: a dielectric layer; a metal layer disposed on the dielectric layer and having a die pad and traces, the traces each including a trace body, a bond pad extending to the periphery of the die pad, and an opposite trace end; metal pillars penetrating the dielectric layer with one ends thereof connecting to the die pad and the trace ends while the other ends thereof protruding from the dielectric layer; a semiconductor chip mounted on the die pad and electrically connected to the bond pads through bonding wires; and an encapsulant covering the semiconductor chip, the bonding wires, the metal layer, and the dielectric layer. The invention is characterized by disposing traces with bond pads close to the die pad to shorten bonding wires and forming metal pillars protruding from the dielectric layer to avoid solder bridging encountered in prior techniques.