发明申请
US20080179288A1 PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL AND WAFER FRONT SIDE SCAVENGER PLASMA
审中-公开
WAFER背面聚合物去除方法和WAFER FRONT SIDE SCAVENGER PLASMA
- 专利标题: PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL AND WAFER FRONT SIDE SCAVENGER PLASMA
- 专利标题(中): WAFER背面聚合物去除方法和WAFER FRONT SIDE SCAVENGER PLASMA
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申请号: US11685767申请日: 2007-03-14
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公开(公告)号: US20080179288A1公开(公告)日: 2008-07-31
- 发明人: KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
- 申请人: KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
- 主分类号: C23F1/00
- IPC分类号: C23F1/00
摘要:
A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. A first plasma is generated in a lower external chamber from a polymer etch precursor gas, and an etchant by-product is introduced from the first plasma into the lower process zone. A second plasma is generated in an upper external plasma chamber from a precursor gas of a scavenger of the etchant by-product, and scavenger species are introduced from the second plasma into the upper process zone.
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