公开(公告)号：US09129777B2

公开(公告)日：2015-09-08

申请号：US13595201

申请日：2012-08-27

Applicant: Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

Inventor： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

IPC: C23F1/08 ,  H01J37/32

CPC classification number: H01J37/3233 ,  H01J37/32082

Abstract: A plasma reactor that generates plasma in workpiece processing chamber by a electron beam, has an electron beam source chamber and an array of plasma sources facing the electron beam source chamber for affecting plasma electron density in different portions of the processing chamber. In another embodiment, an array of separately controlled electron beam source chambers is provided.

Abstract translation: 通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源室和面向电子束源室的等离子体源的阵列，用于影响处理室的不同部分中的等离子体电子密度。 在另一个实施例中，提供了独立控制的电子束源室的阵列。

公开(公告)号：US20150143677A1

公开(公告)日：2015-05-28

申请号：US13998723

申请日：2013-11-26

Applicant: Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC: H01L21/67

CPC classification number: H01L21/67011 ,  C04B35/486 ,  C04B35/505 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/9669 ,  Y10T29/41

Abstract: A solid solution-comprising ceramic article useful in semiconductor processing, which article may be in the form of a solid, bulk ceramic, or may be in the form of a substrate having a ceramic coating of the same composition as the bulk ceramic material on at least one outer surface. The ceramic article is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The ceramic-comprising article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 91 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 9 mole %.

Abstract translation: 一种可用于半导体加工的固体溶液陶瓷制品，该制品可以是固体，本体陶瓷的形式，或者可以是具有与在其上的块状陶瓷材料相同组成的陶瓷涂层的基材形式 至少一个外表面。 陶瓷制品耐受含卤素等离子体侵蚀，并提供有利的机械性能。 含固溶体的陶瓷制品由氧化钇和氧化锆的组合形成。 包含陶瓷的制品包括由摩尔浓度为约96摩尔％至约91摩尔％的氧化锆形成的陶瓷和摩尔浓度为约4摩尔％至约9摩尔％的氧化钇。

公开(公告)号：US20150048739A1

公开(公告)日：2015-02-19

申请号：US14460683

申请日：2014-08-15

Applicant: John C. Forster ,  Joseph Yudovsky ,  Garry K. Kwong ,  Tai T. Ngo ,  Kevin Griffin ,  Kenneth S. Collins ,  Ren Liu

Inventor： John C. Forster ,  Joseph Yudovsky ,  Garry K. Kwong ,  Tai T. Ngo ,  Kevin Griffin ,  Kenneth S. Collins ,  Ren Liu

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32357 ,  H01J37/32513 ,  H01J37/32541 ,  H01J37/32568

Abstract: A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.

Abstract translation: 描述了与处理室一起使用的模块化等离子体源组件。 该组件包括具有端电介质的RF热电极和邻近电极侧面定位的滑动接地连接。 密封箔将滑动接地连接到壳体，以提供通过端部电介质与热电极分离的接地滑动接地连接。 同轴馈电线通过导管进入与处理环境隔离的RF热电极，使得同轴RF馈电线处于大气压力，同时等离子体处理区域处于减压状态。

公开(公告)号：US08951384B2

公开(公告)日：2015-02-10

申请号：US13595292

申请日：2012-08-27

Applicant: Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

Inventor： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

IPC: H05H1/46 ,  G21K5/00 ,  H01J37/32 ,  H05H7/00

CPC classification number: H01J37/3233 ,  G21K5/00 ,  H05H1/46 ,  H05H7/001

Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.

Abstract translation: 通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源和分段的束流，其形状是为了促进电子束产生的等离子体中的均匀性。

公开(公告)号：US08900405B2

公开(公告)日：2014-12-02

申请号：US11985579

申请日：2007-11-14

Applicant: Peter I. Porshnev ,  Majeed A. Foad ,  Kartik Ramaswamy ,  Biagio Gallo ,  Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Amir Al-Bayati

Inventor： Peter I. Porshnev ,  Majeed A. Foad ,  Kartik Ramaswamy ,  Biagio Gallo ,  Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Amir Al-Bayati

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32412

Abstract: The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.

Abstract translation: 本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。 在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。 在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

公开(公告)号：US08858745B2

公开(公告)日：2014-10-14

申请号：US12291747

申请日：2008-11-12

Applicant: Jennifer Y. Sun ,  Ren-Guan Duan ,  Kenneth S. Collins

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Kenneth S. Collins

IPC: C03B29/00 ,  C04B37/00 ,  C03C3/247 ,  C03C3/32 ,  C04B35/119 ,  C03C8/24 ,  B32B17/06 ,  C04B9/02 ,  H01L21/67

CPC classification number: C03C10/16 ,  C03C3/247 ,  C03C3/325 ,  C03C8/24 ,  C03C2204/00 ,  C04B35/119 ,  C04B37/005 ,  C04B2235/3201 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/445 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/80 ,  C04B2237/06 ,  C04B2237/064 ,  C04B2237/08 ,  C04B2237/10 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/60 ,  C04B2237/708 ,  C04B2237/72 ,  H01L21/6719

Abstract: Embodiments of the invention relate to component structures which are useful as apparatus in plasma processing chambers. Portions of the component structures are bonded together using oxyfluoride-comprising glazes, glass ceramics, and combinations thereof. The bonding material is resistant to halogen-containing plasmas and exhibits desirable mechanical properties.

Abstract translation: 本发明的实施例涉及可用作等离子体处理室中的装置的部件结构。 使用含氟氟化物的釉料，玻璃陶瓷及其组合将部件结构的部分粘结在一起。 粘合材料对含卤素等离子体具有耐受性，并且具有所需的机械性能。

公开(公告)号：US20130224498A1

公开(公告)日：2013-08-29

申请号：US13986040

申请日：2013-03-25

Applicant: Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC: C04B35/505

CPC classification number: C04B35/505 ,  B32B18/00 ,  C04B35/486 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/6582 ,  C04B2235/668 ,  C04B2235/762 ,  C04B2235/80 ,  C04B2235/9669 ,  H01J37/32467 ,  H01J37/32504 ,  Y10T428/31678

Abstract: A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide, zirconium oxide, and aluminum oxide. In a first embodiment, the solid solution-comprising ceramic article is a solid, sintered body of the solid solution ceramic material. In a second embodiment, the solid solution-comprising article comprises a substrate underlying a solid solution-comprising coating.

公开(公告)号：US08496756B2

公开(公告)日：2013-07-30

申请号：US12915240

申请日：2010-10-29

Applicant: James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

Inventor： James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

IPC: B08B6/00

CPC classification number: H01L21/6719 ,  H01J37/32899

Abstract: Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached.

Abstract translation: 本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。 在一些实施例中，一种方法可以包括将处理气体从共用气体面板流动到第一处理室的处理容积和第二处理室的处理容积; 在所述第一处理体积中形成第一等离子体以处理所述第一基板和第二等离子体以处理所述第二基板; 监测第一处理量和第二处理量以确定任一体积中是否达到过程终点; 并且当达到第一端点时同时终止第一和第二等离子体; 或在第一处理容积中达到第一端点时终止第一等离子体，同时继续在第二处理容积中提供第二等离子体直到达到第二端点。

公开(公告)号：US20130098883A1

公开(公告)日：2013-04-25

申请号：US13595452

申请日：2012-08-27

Applicant: Kallol Bera ,  Shahid Rauf ,  Leonid Dorf ,  Kenneth S. Collins ,  Ajit Balakrishna ,  Gary Leray

Inventor： Kallol Bera ,  Shahid Rauf ,  Leonid Dorf ,  Kenneth S. Collins ,  Ajit Balakrishna ,  Gary Leray

IPC: B23K15/00

CPC classification number: H01J37/3233 ,  H05H1/46 ,  H05H7/001

Abstract: A plasma reactor employs an e-beam source to generate plasma, and the e-beam source has a configurable magnetic shield.

Abstract translation: 等离子体反应器采用电子束源产生等离子体，并且电子束源具有可配置的磁屏蔽。

公开(公告)号：US20130098872A1

公开(公告)日：2013-04-25

申请号：US13595134

申请日：2012-08-27

Applicant: Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

Inventor： Leonid Dorf ,  Shahid Rauf ,  Kenneth S. Collins ,  Nipun Misra ,  James D. Carducci ,  Gary Leray ,  Kartik Ramaswamy

IPC: H05H1/24 ,  B44C1/22

CPC classification number: H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32669

Abstract: An array of electron beam sources surrounding a processing region of a plasma reactor is periodically switched to change electron beam propagation direction and remove or reduce non-uniformities.

Abstract translation: 周期性地切换围绕等离子体反应器的处理区域的电子束源的阵列，以改变电子束传播方向并去除或减少不均匀性。