发明申请
- 专利标题: SEMICONDUCTOR APPARATUS
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申请号: US12020288申请日: 2008-01-25
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公开(公告)号: US20080179671A1公开(公告)日: 2008-07-31
- 发明人: Wataru SAITO , Syotaro ONO
- 申请人: Wataru SAITO , Syotaro ONO
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-021337 20070131
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A semiconductor apparatus includes: a first first-conductivity-type semiconductor layer; a second first-conductivity-type semiconductor layer provided on a major surface of the first first-conductivity-type semiconductor layer in a device region and a termination region outside the device region; a third second-conductivity-type semiconductor layer being adjacent to the second first-conductivity-type semiconductor layer, forming a periodic array structure; a field insulating film provided on the second first-conductivity-type semiconductor layer and the third second-conductivity-type semiconductor layer in the termination region; a first field plate electrode provided on the field insulating film and connected to the second main electrode or the control electrode; and a second field plate electrode. The second field plate electrode partly overlies the first field plate electrode through intermediary of an insulating film and extends on the field insulating film outside the first field plate electrode. The second field plate electrode is floating in potential.