发明申请
US20080182347A1 Methods for monitoring ion implant process in bond and cleave, silicon-on-insulator (SOI) wafer manufacturing
审中-公开
监测离子注入工艺在绝缘体上硅（SOI）晶圆制造中的方法
- 专利标题： Methods for monitoring ion implant process in bond and cleave, silicon-on-insulator (SOI) wafer manufacturing
- 专利标题（中）： 监测离子注入工艺在绝缘体上硅（SOI）晶圆制造中的方法
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申请号： US11998901申请日： 2007-12-03
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公开(公告)号： US20080182347A1公开(公告)日： 2008-07-31
- 发明人: Kenneth Steeples , Adam Bertuch , Edward Tsidilkovski
- 申请人： Kenneth Steeples , Adam Bertuch , Edward Tsidilkovski
- 申请人地址： US MA Billerica
- 专利权人： QC Solutions, Inc.
- 当前专利权人： QC Solutions, Inc.
- 当前专利权人地址： US MA Billerica
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; B05C11/00
摘要：
A method of in-line characterization of ion implant process, during the SOI bond and cleave manufacturing or engineered silicon layer fabrication. In one embodiment, the method includes the steps of illuminating the engineered donor wafer using a modulated light source; performing a non-contact SPV measurement on the silicon wafer; measuring a dynamic charge (Qd) in response to implant induced crystal damage; and determining the accuracy and uniformity of the value of an implant parameter in response to the dynamic charge. In another embodiment, In another embodiment, the step of determining utilizes the equation VPV≈kTΦ/ωQnet where VPV is photo voltage generated in the implanted wafer, Φ is a light flux of the modulated light source, T is temperature of the wafer, and ω is a light modulation frequency of the modulated light source.
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