公开(公告)号：US07403023B2

公开(公告)日：2008-07-22

申请号：US11376755

申请日：2006-03-14

Applicant: Kenneth Steeples ,  Edward Tsidilkovski

Inventor： Kenneth Steeples ,  Edward Tsidilkovski

IPC: G01R31/302

CPC classification number: H01L22/14 ,  G01R31/2648 ,  G01R31/311 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to the use of the metrology methods and the related apparatus disclosed herein that incorporate thermal treatment devices and methods that improve defect detection. Specifically, in one aspect the invention relates to method of thermally treating a semiconductor wafer such that an acceleration of interstitial defect migration is achieved while leaving vacancy defects substantially unaltered.

Abstract translation: 本发明涉及包括热处理装置和改进缺陷检测的方法的本文公开的计量方法和相关装置的使用。 具体地说，一方面，本发明涉及对半导体晶片进行热处理的方法，使得实现间隙缺陷迁移的加速，同时留下空缺缺陷基本上不改变。

公开(公告)号：US20080036464A1

公开(公告)日：2008-02-14

申请号：US11881730

申请日：2007-07-27

Applicant: Kenneth Steeples ,  Edward Tsidilkovski ,  William Goldfarb

Inventor： Kenneth Steeples ,  Edward Tsidilkovski ,  William Goldfarb

IPC: G01N27/60

CPC classification number: G01R31/311 ,  G01R1/07 ,  G01R31/2648

Abstract: A probe adapted for characterization of a semiconductor wafer having a surface. In one embodiment, the probe includes a source of modulated light; an optical fiber in optical communication with the source of modulated light, the optical fiber having a face and comprises a fiber core; and a transparent conductive layer coating the face of the optical fiber. Light from the source of modulated light is directed along the fiber core of the optical fiber through the face of the optical fiber to the surface of the semiconductor wafer. The optically transparent conductive layer detects charges from the surface of the semiconductor wafer.

Abstract translation: 一种用于表征具有表面的半导体晶片的探针。 在一个实施例中，探针包括调制光源; 与调制光源光学通信的光纤，所述光纤具有面并且包括光纤芯; 以及涂覆光纤的表面的透明导电层。 来自调制光源的光沿着光纤的光纤芯通过光纤的表面引导到半导体晶片的表面。 光透明导电层从半导体晶片的表面检测电荷。

公开(公告)号：US06911350B2

公开(公告)日：2005-06-28

申请号：US10402621

申请日：2003-03-28

Applicant: Edward Tsidilkovski ,  Kenneth Steeples

Inventor： Edward Tsidilkovski ,  Kenneth Steeples

IPC: H01J37/317 ,  H01L21/66

CPC classification number: H01J37/3171 ,  H01J2237/31703 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus and method for the real-time, in-line testing of semiconductor wafers during the manufacturing process. In one embodiment the apparatus includes a probe assembly within a semiconductor wafer processing line. As each wafer passes adjacent the probe assembly, a source of modulated light, within the probe assembly, having a predetermined wavelength and frequency of modulation, impinges upon the wafer. A sensor in the probe assembly measures the surface photovoltage induced by the modulated light. A computer then uses the induced surface photovoltage to determine various electrical characteristics of the wafer.

公开(公告)号：US20080020549A1

公开(公告)日：2008-01-24

申请号：US11490491

申请日：2006-07-20

Applicant: Edward Tsidilkovski ,  Kenneth Steeples

Inventor： Edward Tsidilkovski ,  Kenneth Steeples

IPC: H01L21/00

CPC classification number: C23C8/12 ,  H01J61/52 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

Abstract: A method and apparatus for forming an oxide layer on semiconductors using a combination of ultraviolet rays and heat. The apparatus comprises a chamber having a top surface and a bottom surface and defining a wafer holding cavity; an ultraviolet source at the top surface of said chamber; an infrared source at the bottom surface of the chamber; and an oxygen gas inlet for passing oxygen gas through the chamber. Oxygen gas entering the chamber through the oxygen gas inlet is ionized by ultraviolet rays from the ultraviolet source and reacts with the silicon wafer to create an oxide layer on the silicon wafer in the cavity. Infrared radiation from the infrared source heats the silicon wafer to accelerate the creation of the oxide layer on said silicon wafer.

Abstract translation: 一种使用紫外线和热的组合在半导体上形成氧化物层的方法和装置。 该装置包括具有顶表面和底表面并限定晶片保持腔的腔室; 在所述室的顶表面处的紫外线源; 在室的底表面处的红外源; 以及用于使氧气通过室的氧气入口。 通过氧气入口进入室的氧气通过来自紫外线源的紫外线电离并与硅晶片反应，以在空腔中的硅晶片上产生氧化层。 来自红外源的红外辐射加热硅晶片以加速在所述硅晶片上产生氧化物层。

公开(公告)号：US20080182347A1

公开(公告)日：2008-07-31

申请号：US11998901

申请日：2007-12-03

Applicant: Kenneth Steeples ,  Adam Bertuch ,  Edward Tsidilkovski

Inventor： Kenneth Steeples ,  Adam Bertuch ,  Edward Tsidilkovski

IPC: H01L21/66 ,  B05C11/00

CPC classification number: G01R31/2648 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24592 ,  H01J2237/31703 ,  H01L21/76254 ,  H01L22/14

Abstract: A method of in-line characterization of ion implant process, during the SOI bond and cleave manufacturing or engineered silicon layer fabrication. In one embodiment, the method includes the steps of illuminating the engineered donor wafer using a modulated light source; performing a non-contact SPV measurement on the silicon wafer; measuring a dynamic charge (Qd) in response to implant induced crystal damage; and determining the accuracy and uniformity of the value of an implant parameter in response to the dynamic charge. In another embodiment, In another embodiment, the step of determining utilizes the equation VPV≈kTΦ/ωQnet where VPV is photo voltage generated in the implanted wafer, Φ is a light flux of the modulated light source, T is temperature of the wafer, and ω is a light modulation frequency of the modulated light source.

Abstract translation: 离子注入工艺的在线表征的方法，在SOI键和切割制造或工程硅层制造期间。 在一个实施例中，该方法包括以下步骤：使用调制光源照射工程施主晶圆; 在硅晶片上执行非接触SPV测量; 响应于植入物诱导的晶体损伤测量动态电荷（Q SUB）; 以及响应于动态电荷确定植入物参数的值的精度和均匀性。 在另一个实施例中，在另一个实施例中，确定步骤利用方程式V↑≈kTPhi/ωQ> net> where where where where where where where where where where where where where where where where where where where generated generated generated generated 在植入晶片中，Phi是调制光源的光通量，T是晶片的温度，ω是调制光源的调光频率。

公开(公告)号：US20080048636A1

公开(公告)日：2008-02-28

申请号：US11894032

申请日：2007-08-16

Applicant: Edward Tsidilkovski ,  Kenneth Steeples

Inventor： Edward Tsidilkovski ,  Kenneth Steeples

IPC: G01J1/42

CPC classification number: H01L22/12 ,  G01B7/06 ,  G01B11/0625

Abstract: A method and apparatus for thickness measurement of an active layer of a silicon-on-insulator material comprising a layered structure of silicon film, a buried oxide layer and a silicon substrate. In one embodiment, the method comprises the steps of directing a low intensity light of an energy greater than the silicon band-gap on the silicon film, the energy of light sufficient to be substantially absorbed within the silicon film such that the error from the substrate excitation is small compared to the small signal calibration of the apparatus; modifying the surface potential with the chemical treatment, electrical bias or corona, measuring surface photovoltage of the silicon film; and calculating the thickness of the silicon film in response to a non-contact photovoltage measurement of the semiconductor layered structure.

Abstract translation: 一种用于厚度测量绝缘体上硅材料的有源层的方法和装置，包括硅膜，掩埋氧化物层和硅衬底的分层结构。 在一个实施例中，该方法包括以下步骤：在硅膜上引导大于硅带隙的能量的低强度光，足以在硅膜内基本上吸收光的能量，使得来自衬底的误差 激励与装置的小信号校准相比较小; 用化学处理，电偏置或电晕改变表面电位，测量硅膜的表面光电压; 以及响应于所述半导体层状结构的非接触光电压测量来计算所述硅膜的厚度。