公开(公告)号：US20110311726A1

公开(公告)日：2011-12-22

申请号：US13162850

申请日：2011-06-17

申请人： Guo Liu ,  Adam Bertuch ,  Eric W. Deguns ,  Mark J. Dalberth ,  Ganesh M. Sundaram ,  Jill Svenja Becker

发明人： Guo Liu ,  Adam Bertuch ,  Eric W. Deguns ,  Mark J. Dalberth ,  Ganesh M. Sundaram ,  Jill Svenja Becker

IPC分类号： C23C16/448 ,  B05C11/00

CPC分类号： C23C16/52 ,  C23C16/4481 ,  C23C16/45544

摘要： An improved precursor vaporization device and method for vaporizing liquid and solid precursors having a low vapor pressure at a desired precursor temperature includes elements and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber. An improved ALD system and method for growing thin films having more thickness and thickness uniformity at lower precursor temperatures includes devices and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber and for releasing a plurality of first precursor pulses into a reaction chamber to react with substrates before releasing a different second precursor pulse into the reaction chamber to react with the substrates.

摘要翻译： 用于蒸发具有所需前体温度的低蒸汽压的液体和固体前体的改进的前体蒸发装置和方法包括在将前体脉冲释放到反应室之前将惰性气体升压脉冲注入前体容器中的元件和操作方法。 用于生长在较低前体温度下具有更大厚度和厚度均匀性的薄膜的改进的ALD系统和方法包括用于在将前体脉冲释放到反应室之前将惰性气体升压脉冲注入前体容器的装置和操作方法， 多个第一前体脉冲进入反应室以在将不同的第二前体脉冲释放到反应室中以与基板反应以与基板反应，以与基板反应。

公开(公告)号：US20080182347A1

公开(公告)日：2008-07-31

申请号：US11998901

申请日：2007-12-03

申请人： Kenneth Steeples ,  Adam Bertuch ,  Edward Tsidilkovski

发明人： Kenneth Steeples ,  Adam Bertuch ,  Edward Tsidilkovski

IPC分类号： H01L21/66 ,  B05C11/00

CPC分类号： G01R31/2648 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24592 ,  H01J2237/31703 ,  H01L21/76254 ,  H01L22/14

摘要： A method of in-line characterization of ion implant process, during the SOI bond and cleave manufacturing or engineered silicon layer fabrication. In one embodiment, the method includes the steps of illuminating the engineered donor wafer using a modulated light source; performing a non-contact SPV measurement on the silicon wafer; measuring a dynamic charge (Qd) in response to implant induced crystal damage; and determining the accuracy and uniformity of the value of an implant parameter in response to the dynamic charge. In another embodiment, In another embodiment, the step of determining utilizes the equation VPV≈kTΦ/ωQnet where VPV is photo voltage generated in the implanted wafer, Φ is a light flux of the modulated light source, T is temperature of the wafer, and ω is a light modulation frequency of the modulated light source.

摘要翻译： 离子注入工艺的在线表征的方法，在SOI键和切割制造或工程硅层制造期间。 在一个实施例中，该方法包括以下步骤：使用调制光源照射工程施主晶圆; 在硅晶片上执行非接触SPV测量; 响应于植入物诱导的晶体损伤测量动态电荷（Q SUB）; 以及响应于动态电荷确定植入物参数的值的精度和均匀性。 在另一个实施例中，在另一个实施例中，确定步骤利用方程式V↑≈kTPhi/ωQ> net> where where where where where where where where where where where where where where where where where where where generated generated generated generated 在植入晶片中，Phi是调制光源的光通量，T是晶片的温度，ω是调制光源的调光频率。