Invention Application
- Patent Title: ELECTRONIC DEVICE INCLUDING A LAYER OF DISCONTINUOUS STORAGE ELEMENTS AND A PROCESS FOR FORMING THE ELECTRONIC DEVICE
- Patent Title (中): 包括不连续存储元件层的电子设备和形成电子设备的方法
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Application No.: US11627817Application Date: 2007-01-26
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Publication No.: US20080182428A1Publication Date: 2008-07-31
- Inventor: Tushar P. Merchant , Chun-Li Liu , Ramachandran Muralidhar , Marius K. Orlowski , Rajesh A. Rao , Matthew Stoker
- Applicant: Tushar P. Merchant , Chun-Li Liu , Ramachandran Muralidhar , Marius K. Orlowski , Rajesh A. Rao , Matthew Stoker
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
An electronic device can include a layer of discontinuous storage elements. A dielectric layer overlying the discontinuous storage elements can be substantially hydrogen-free. A process of forming the electronic device can include forming a layer including silicon over the discontinuous storage elements. In one embodiment, the process includes oxidizing at least substantially all of the layer. In another embodiment, the process includes forming the layer using a substantially hydrogen-free silicon precursor material and oxidizing at least substantially all of the layer.
Public/Granted literature
- US07932189B2 Process of forming an electronic device including a layer of discontinuous storage elements Public/Granted day:2011-04-26
Information query
IPC分类:
