发明申请
- 专利标题: Sensor semiconductor package and fabrication
- 专利标题(中): 传感器半导体封装和制造
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申请号: US12011933申请日: 2008-01-30
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公开(公告)号: US20080185671A1公开(公告)日: 2008-08-07
- 发明人: Chien-Ping Huang , Cheng-Yi Chang , Chang-Yueh Chan
- 申请人: Chien-Ping Huang , Cheng-Yi Chang , Chang-Yueh Chan
- 申请人地址: TW Taichung
- 专利权人: Siliconware Precision Inductries Co., Ltd.
- 当前专利权人: Siliconware Precision Inductries Co., Ltd.
- 当前专利权人地址: TW Taichung
- 优先权: TW096103830 20070202; TW096120928 20070211
- 主分类号: H01L31/00
- IPC分类号: H01L31/00 ; H01L21/00
摘要:
A sensor semiconductor package and a fabrication method thereof are provided in the present application. The fabrication method comprises steps of: forming a plurality of grooves on a wafer between bond pads on active surfaces of every adjacent chips; forming metal layers in the grooves for electrically connecting with the bond pads of adjacent chips; thinning the non-active surfaces to expose the metal layers therefrom; forming a cover layer on the non-active surfaces with the metal layers are exposed therefrom; forming a solder resist layer on the covering layer and the conductive wirings with terminals of the conductive wirings are exposed therefrom; and cutting along cutting paths between every sensor chips to form a plurality of sensor semiconductor packages. Accordingly, the prior art problems such as misalignment of forming beveled grooves, concentrated stress and breakage can be solved.
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