公开(公告)号：US20080185671A1

公开(公告)日：2008-08-07

申请号：US12011933

申请日：2008-01-30

申请人： Chien-Ping Huang ,  Cheng-Yi Chang ,  Chang-Yueh Chan

发明人： Chien-Ping Huang ,  Cheng-Yi Chang ,  Chang-Yueh Chan

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14618 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/0203 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05655 ,  H01L2224/13 ,  H01L2924/00014

摘要： A sensor semiconductor package and a fabrication method thereof are provided in the present application. The fabrication method comprises steps of: forming a plurality of grooves on a wafer between bond pads on active surfaces of every adjacent chips; forming metal layers in the grooves for electrically connecting with the bond pads of adjacent chips; thinning the non-active surfaces to expose the metal layers therefrom; forming a cover layer on the non-active surfaces with the metal layers are exposed therefrom; forming a solder resist layer on the covering layer and the conductive wirings with terminals of the conductive wirings are exposed therefrom; and cutting along cutting paths between every sensor chips to form a plurality of sensor semiconductor packages. Accordingly, the prior art problems such as misalignment of forming beveled grooves, concentrated stress and breakage can be solved.

摘要翻译： 在本申请中提供了一种传感器半导体封装及其制造方法。 该制造方法包括以下步骤：在每个相邻芯片的有源表面上的接合焊盘之间的晶片上形成多个凹槽; 在所述凹槽中形成用于与相邻芯片的接合焊盘电连接的金属层; 使非活性表面变薄从而使金属层露出; 在金属层的非活性表面上形成覆盖层从其露出; 在覆盖层上形成阻焊层，并且导电布线与导电配线的端子相接触; 并且沿着每个传感器芯片之间的切割路径切割以形成多个传感器半导体封装。 因此，可以解决现有技术的问题，例如形成斜槽的未对准，集中应力和断裂。