发明申请
US20080191249A1 Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement
有权
用于平坦化金属图案周围的介电层以实现光学效率提高的方法
- 专利标题: Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement
- 专利标题(中): 用于平坦化金属图案周围的介电层以实现光学效率提高的方法
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申请号: US11703965申请日: 2007-02-08
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公开(公告)号: US20080191249A1公开(公告)日: 2008-08-14
- 发明人: Yeou-Lang Hsieh , Chin-Min Lin , Jiann-Jong Wang
- 申请人: Yeou-Lang Hsieh , Chin-Min Lin , Jiann-Jong Wang
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号: H01L31/113
- IPC分类号: H01L31/113 ; H01L31/062
摘要:
A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency includes first depositing a first dielectric having an optically transparent property on and around a metal pattern. Optical sensors are formed in or on the substrate in areas between metal features. The metal pattern protects a sensor situated therebetween and thereunder from electromagnetic radiation. After the first dielectric layer is polished using CMP, a slanted or inclined surface is produced but this non-uniformity is eliminated using further planarization processes that produce a uniform total dielectric thickness for the proper functioning of the sensor.
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