公开(公告)号：US08030114B2

公开(公告)日：2011-10-04

申请号：US11733514

申请日：2007-04-10

申请人： Chun-Chieh Chuang ,  Chin-Min Lin ,  Ken Wen-Chien Fu ,  Dun-Nian Yaung

发明人： Chun-Chieh Chuang ,  Chin-Min Lin ,  Ken Wen-Chien Fu ,  Dun-Nian Yaung

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643

摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.

摘要翻译： 制造图像传感器的方法包括提供具有像素区域和外围区域的半导体衬底，在像素区域上形成感光元件，以及在像素区域中形成至少一个晶体管和在周边区域中形成至少一个晶体管 。 在像素区域和外围区域中形成至少一个晶体管的步骤包括在像素区域和外围区域中形成栅电极，在像素区域和外围区域上沉积电介质层，部分蚀刻电介质层以形成侧壁间隔物 并且留下覆盖像素区域的电介质层的一部分，以及通过离子注入形成源极/漏极（S / D）区域。

公开(公告)号：US20090020838A1

公开(公告)日：2009-01-22

申请号：US11779122

申请日：2007-07-17

申请人： Chin-Min Lin ,  Dun-Nian Yaung ,  Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Chun-Ming Su

发明人： Chin-Min Lin ,  Dun-Nian Yaung ,  Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Chun-Ming Su

IPC分类号： H01L31/0232 ,  H01L21/00

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H04N9/045

摘要： An image sensor device includes a semiconductor substrate having a front surface and a back surface; an array of pixels formed on the front surface of the semiconductor substrate, each pixel being adapted for sensing light radiation; an array of color filters formed over the plurality of pixels, each color filter being adapted for allowing a wavelength of light radiation to reach at least one of the plurality of pixels; and an array of micro-lens formed over the array of color filters, each micro-lens being adapted for directing light radiation to at least one of the color filters in the array. The array of color filters includes structure adapted for blocking light radiation that is traveling towards a region between adjacent micro-lens.

摘要翻译： 图像传感器装置包括具有前表面和后表面的半导体衬底; 形成在所述半导体衬底的前表面上的像素阵列，每个像素适于感测光辐射; 形成在所述多个像素上的滤色器阵列，每个滤色器适于允许光辐射的波长到达所述多个像素中的至少一个像素; 以及形成在滤色器阵列上的微透镜阵列，每个微透镜适于将光辐射引导到阵列中的至少一个滤色器。 滤色器阵列包括适于阻挡朝向相邻微透镜之间的区域传播的光辐射的结构。

公开(公告)号：US20080191249A1

公开(公告)日：2008-08-14

申请号：US11703965

申请日：2007-02-08

申请人： Yeou-Lang Hsieh ,  Chin-Min Lin ,  Jiann-Jong Wang

发明人： Yeou-Lang Hsieh ,  Chin-Min Lin ,  Jiann-Jong Wang

IPC分类号： H01L31/113 ,  H01L31/062

CPC分类号： H01L27/14698 ,  H01L21/31053 ,  H01L21/31055 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14818

摘要： A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency includes first depositing a first dielectric having an optically transparent property on and around a metal pattern. Optical sensors are formed in or on the substrate in areas between metal features. The metal pattern protects a sensor situated therebetween and thereunder from electromagnetic radiation. After the first dielectric layer is polished using CMP, a slanted or inclined surface is produced but this non-uniformity is eliminated using further planarization processes that produce a uniform total dielectric thickness for the proper functioning of the sensor.

摘要翻译： 一种用于提高介电层平坦化和均匀性的方法和系统，用于提高CCD和CMOS图像传感器设备的光学效率。 在各种实施例中，用于实现更好的光学效率的介电平面化方法包括首先在金属图案上和周围沉积具有光学透明性质的第一电介质。 光学传感器形成在金属特征之间的区域中或基底上。 金属图案保护位于其间的传感器和电磁辐射。 在使用CMP抛光第一电介质层之后，产生倾斜或倾斜的表面，但是使用产生用于传感器的正常功能的均匀的总电介质厚度的进一步的平坦化处理来消除该不均匀性。

公开(公告)号：US20080179640A1

公开(公告)日：2008-07-31

申请号：US11733514

申请日：2007-04-10

申请人： Chun-Chieh Chuang ,  Chin-Min Lin ,  Ken Wen-Chien Fu ,  Dun-Nian Yaung

发明人： Chun-Chieh Chuang ,  Chin-Min Lin ,  Ken Wen-Chien Fu ,  Dun-Nian Yaung

IPC分类号： H01L31/113 ,  H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643

摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.

摘要翻译： 制造图像传感器的方法包括提供具有像素区域和外围区域的半导体衬底，在像素区域上形成感光元件，以及在像素区域中形成至少一个晶体管和在周边区域中形成至少一个晶体管 。 在像素区域和外围区域中形成至少一个晶体管的步骤包括在像素区域和外围区域中形成栅电极，在像素区域和外围区域上沉积电介质层，部分蚀刻电介质层以形成侧壁间隔物 并且留下覆盖像素区域的电介质层的一部分，以及通过离子注入形成源极/漏极（S / D）区域。

公开(公告)号：US20080173966A1

公开(公告)日：2008-07-24

申请号：US11625353

申请日：2007-01-22

申请人： Chin-Min Lin

发明人： Chin-Min Lin

IPC分类号： H01L31/00 ,  H01L21/44

CPC分类号： H01L27/14685 ,  H01L24/03 ,  H01L24/05 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14643 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03622 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device is disclosed. The semiconductor device provides a substrate comprising an image sensor region and a circuit region, wherein the circuit region comprises a pad region and a connecting region. A multilayer interconnect structure is formed on the substrate, wherein the multilayer interconnect structure comprises a plurality of dielectric layers, a plurality of lower wirings at the pad region and the connecting region, and a top wiring on at least one of the lower wirings at the connecting region. A passivation layer is formed over the multilayer interconnect structure. A pad structure is formed through the passivation layer and at least one of the dielectric layers on and electrically connected to at least one of the lower wirings at the pad region.

摘要翻译： 公开了一种半导体器件。 半导体器件提供包括图像传感器区域和电路区域的衬底，其中电路区域包括衬垫区域和连接区域。 多层互连结构形成在衬底上，其中多层互连结构包括多个电介质层，在焊盘区域和连接区域处的多个下布线，以及在布线区域中的至少一个下布线上的顶布线 连接区域。 钝化层形成在多层互连结构上。 衬垫结构通过钝化层形成，并且至少一个电介质层在焊盘区域上并且电连接到下布线中的至少一个。

公开(公告)号：US20070158532A1

公开(公告)日：2007-07-12

申请号：US11330481

申请日：2006-01-12

申请人： Chin-Min Lin

发明人： Chin-Min Lin

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14685 ,  H01L27/14627

摘要： An image sensor array includes a substrate having at least three image sensors located therein. The image sensor array also includes a blue filter positioned proximate to the first image sensor; a green filter proximate to the second image sensor; and a red filter proximate to the third image sensor A first microlens is positionally arranged with the blue filter and the first image sensor; a second microlens is positionally arranged with the green filter and the second image sensor; and a third microlens is positionally arranged with the red filter and the third image sensor. The first microlens has a larger effective area than the second microlens, and the second microlens has a larger effective area than the third microlens.

摘要翻译： 图像传感器阵列包括其中具有至少三个图像传感器的基板。 图像传感器阵列还包括靠近第一图像传感器定位的蓝色滤光器; 接近第二图像传感器的绿色过滤器; 和靠近第三图像传感器A的红色滤色器第一微透镜与蓝色滤色器和第一图像传感器位置布置; 第二微透镜与绿色滤光器和第二图像传感器位置布置; 并且第三微透镜与红色滤光器和第三图像传感器位置布置。 第一微透镜具有比第二微透镜更大的有效面积，并且第二微透镜具有比第三微透镜更大的有效面积。

公开(公告)号：US07196012B2

公开(公告)日：2007-03-27

申请号：US11084228

申请日：2005-03-16

申请人： Yeou-Lang Hsieh ,  Chin-Min Lin ,  Jiann-Jong Wang

发明人： Yeou-Lang Hsieh ,  Chin-Min Lin ,  Jiann-Jong Wang

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/76819 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685

摘要： A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency includes first depositing a first dielectric having an optically transparent property on and around a metal pattern. Optical sensors are formed in or on the substrate in areas between metal features. The metal pattern protects a sensor situated therebetween and thereunder from electromagnetic radiation. After the first dielectric layer is polished using CMP, a slanted or inclined surface is produced but this non-uniformity is eliminated using further planarization processes that produce a uniform total dielectric thickness for the proper functioning of the sensor.

摘要翻译： 一种用于提高介电层平坦化和均匀性的方法和系统，用于提高CCD和CMOS图像传感器设备的光学效率。 在各种实施例中，用于实现更好的光学效率的介电平面化方法包括首先在金属图案上和周围沉积具有光学透明性质的第一电介质。 光学传感器形成在金属特征之间的区域中或基底上。 金属图案保护位于其间的传感器和电磁辐射。 在使用CMP抛光第一电介质层之后，产生倾斜或倾斜的表面，但是使用产生用于传感器的正常功能的均匀的总电介质厚度的进一步的平坦化处理来消除该不均匀性。

公开(公告)号：US08175735B2

公开(公告)日：2012-05-08

申请号：US12568687

申请日：2009-09-29

申请人： Kung-Jeng Wang ,  Shih-Min Wang ,  Chin-Min Lin

发明人： Kung-Jeng Wang ,  Shih-Min Wang ,  Chin-Min Lin

IPC分类号： G06F19/00 ,  G06F17/50

CPC分类号： G06Q50/04 ,  G06Q10/06 ,  G06Q10/06375 ,  Y02P90/30

摘要： A system and a method of multi-objective capacity planning in the thin film transistor liquid crystal display (TFT-LCD) panel manufacturing industry are provided. The system includes a capacity planning module and a multi-objective planning module. In the present method, a capacity planning plan corresponding to different objective is evaluated by the capacity planning module. A set of constraints of each objective is established by the multi-objective planning module according to characteristic parameters, so as to optimize the objective. Then, the optimized objectives are drawn into a graph to select an appropriate capacity planning plan.

摘要翻译： 提供了薄膜晶体管液晶显示（TFT-LCD）面板制造业中的多目标容量规划的系统和方法。 该系统包括容量规划模块和多目标规划模块。 在本方法中，通过容量规划模块对不同目标对应的容量规划方案进行评估。 通过多目标规划模块根据特征参数建立每个目标的一组约束，从而优化目标。 然后，将优化的目标绘制成图，以选择适当的容量规划计划。

公开(公告)号：US07750470B2

公开(公告)日：2010-07-06

申请号：US11703965

申请日：2007-02-08

申请人： Yeou-Lang Hsieh ,  Chin-Min Lin ,  Jiann-Jong Wang

发明人： Yeou-Lang Hsieh ,  Chin-Min Lin ,  Jiann-Jong Wang

IPC分类号： H01L23/48

CPC分类号： H01L27/14698 ,  H01L21/31053 ,  H01L21/31055 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14818

摘要： A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency includes first depositing a first dielectric having an optically transparent property on and around a metal pattern. Optical sensors are formed in or on the substrate in areas between metal features. The metal pattern protects a sensor situated therebetween and thereunder from electromagnetic radiation. After the first dielectric layer is polished using CMP, a slanted or inclined surface is produced but this non-uniformity is eliminated using further planarization processes that produce a uniform total dielectric thickness for the proper functioning of the sensor.

摘要翻译： 一种用于提高介电层平坦化和均匀性的方法和系统，用于提高CCD和CMOS图像传感器设备的光学效率。 在各种实施例中，用于实现更好的光学效率的介电平面化方法包括首先在金属图案上和周围沉积具有光学透明性质的第一电介质。 光学传感器形成在金属特征之间的区域中或基底上。 金属图案保护位于其间的传感器和电磁辐射。 在使用CMP抛光第一电介质层之后，产生倾斜或倾斜的表面，但是使用产生用于传感器的正常功能的均匀的总电介质厚度的进一步的平坦化处理来消除该不均匀性。

公开(公告)号：US07446294B2

公开(公告)日：2008-11-04

申请号：US11330481

申请日：2006-01-12

申请人： Chin-Min Lin

发明人： Chin-Min Lin

IPC分类号： H01L27/00

CPC分类号： H01L27/14685 ,  H01L27/14627

摘要： An image sensor array includes a substrate having at least three image sensors located therein. The image sensor array also includes a blue filter positioned proximate to the first image sensor; a green filter proximate to the second image sensor; and a red filter proximate to the third image sensor A first microlens is positionally arranged with the blue filter and the first image sensor; a second microlens is positionally arranged with the green filter and the second image sensor; and a third microlens is positionally arranged with the red filter and the third image sensor. The first microlens has a larger effective area than the second microlens, and the second microlens has a larger effective area than the third microlens.

摘要翻译： 图像传感器阵列包括其中具有至少三个图像传感器的基板。 图像传感器阵列还包括靠近第一图像传感器定位的蓝色滤光器; 接近第二图像传感器的绿色过滤器; 和靠近第三图像传感器A的红色滤色器第一微透镜与蓝色滤色器和第一图像传感器位置布置; 第二微透镜与绿色滤光器和第二图像传感器位置布置; 并且第三微透镜与红色滤光器和第三图像传感器位置布置。 第一微透镜具有比第二微透镜更大的有效面积，并且第二微透镜具有比第三微透镜更大的有效面积。