发明申请
- 专利标题： Optical Transmission Improvement On Multi-Dielectric Structure In Advance CMOS Imager
- 专利标题（中）： 高级CMOS成像仪中多介质结构的光传输改进
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申请号： US11672681申请日： 2007-02-08
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公开(公告)号： US20080191296A1公开(公告)日： 2008-08-14
- 发明人: Wen-De Wang , Dun-Nian Yaung , Tzu-Hsuan Hsu , Shine Chung
- 申请人： Wen-De Wang , Dun-Nian Yaung , Tzu-Hsuan Hsu , Shine Chung
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L31/0232
- IPC分类号： H01L31/0232 ; H01L31/18
摘要：
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a sensor element disposed in a semiconductor substrate; an inter-level dielectric (ILD) disposed on the semiconductor substrate; and a trench disposed in the ILD, overlying and enclosing the sensor element, and filled with a first dielectric material.
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