发明申请
US20080193643A1 ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS 有权
原子层沉积系统和方法

  • 专利标题: ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS
  • 专利标题(中): 原子层沉积系统和方法
  • 申请号: US11673852
    申请日: 2007-02-12
  • 公开(公告)号: US20080193643A1
    公开(公告)日: 2008-08-14
  • 发明人: Anthony Dip
  • 申请人: Anthony Dip
  • 申请人地址: JP Tokyo
  • 专利权人: TOKYO ELECTRON LIMITED
  • 当前专利权人: TOKYO ELECTRON LIMITED
  • 当前专利权人地址: JP Tokyo
  • 主分类号: C23C16/00
  • IPC分类号: C23C16/00
ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS
摘要:
Systems and methods for depositing thin films using Atomic Layer Deposition (ALD). The deposition system includes a process chamber with a peripheral sidewall, partitions that divide a processing space inside the process chamber into at least first and second compartments, and a platter that supports substrates within the processing space. The platter rotates the substrates relative to the stationary peripheral sidewall and compartments. The first compartment receives a process material used to deposit a layer on each of the substrates. An injector, which injects the process material, communicates with the first compartment through the peripheral sidewall.
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