A magnetic memory device in which an MRAM element is magnetically shielded from large external magnetic fields. The magnetic memory device includes: a substrate; a magnetic random access memory mounted on the substrate, the magnetic random access memory including a memory element having a magnetized pinned layer with fixed direction of magnetization and a magnetic layer with changeable direction of magnetization stacked on one another; another element mounted on the substrate; and a pair of magnetic shielding layers which magnetically shield the memory element, the magnetic shielding layers located relatively above and below the memory element and within a region corresponding to an area occupied by the memory element.