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    Magnetic memory device
    2.
    发明申请
    Magnetic memory device 审中-公开
    磁存储器件

    公开(公告)号：US20050226030A1

    公开(公告)日：2005-10-13

    申请号：US10504626

    申请日：2003-12-12

    申请人： Yoshihiro Kato ,  Katsumi Okayama ,  Kaoru Kobayashi ,  Tetsuya Yamamoto ,  Minoru Ikarashi

    发明人： Yoshihiro Kato ,  Katsumi Okayama ,  Kaoru Kobayashi ,  Tetsuya Yamamoto ,  Minoru Ikarashi

    IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L23/00 ,  H01L23/495 ,  H01L23/552 ,  H01L27/105 ,  H01L43/02 ,  H01L43/08 ,  G11C11/00

    CPC分类号： H01L23/49575 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A magnetic memory device in which an MRAM element is magnetically shielded from a large external magnetic field in an satisfactory manner, making it possible to surely achieve an operation free of problems in a magnetic field generated by the environment in which the MRAM element is used. A magnetic random access memory (MRAM) (30) is constituted by a TMR element (10) having a magnetized pinned layer (4), (6) with fixed direction of magnetization and a magnetic layer (memory layer) (2) with changeable direction of magnetization stacked on one another, mounted on a substrate together with another element (38), such as a DRAM, wherein a magnetic shielding layer (33), (34) is formed in a region corresponding to an area occupied by the MRAM element (30) or/and a magnetic shielding layer (33), (34) is with a distance of 15 mm or less between the opposite sides (especially, a length or a width).

    摘要翻译： 一种磁记录装置，其中MRAM元件以令人满意的方式从大的外部磁场磁屏蔽，使得可以可靠地实现在由使用MRAM元件的环境产生的磁场中没有问题的操作。 磁性随机存取存储器（MRAM）（30）由具有固定磁化方向的磁化钉扎层（4），（6）的TMR元件（10）和具有可变形的磁性层（存储层）（2）构成 彼此堆叠的磁化方向，与诸如DRAM的另一元件（38）一起安装在基板上，其中在与MRAM占据的区域对应的区域中形成磁屏蔽层（33）（34） 元件（30）或/和磁屏蔽层（33），（34）在相对侧（特别是长度或宽度）之间的距离为15mm以下。

    MAGNETIC MEMORY DEVICE
    3.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开
    磁记忆装置

    公开(公告)号：US20080197434A1

    公开(公告)日：2008-08-21

    申请号：US12101607

    申请日：2008-04-11

    申请人： Yoshihiro Kato ,  Katsumi Okayama ,  Kaoru Kobayashi ,  Tetsuya Yamamoto ,  Minoru Ikarashi

    发明人： Yoshihiro Kato ,  Katsumi Okayama ,  Kaoru Kobayashi ,  Tetsuya Yamamoto ,  Minoru Ikarashi

    IPC分类号： H01L23/552 ,  H01L29/82

    CPC分类号： H01L23/49575 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A magnetic memory device in which an MRAM element is magnetically shielded from large external magnetic fields. The magnetic memory device includes: a substrate; a magnetic random access memory mounted on the substrate, the magnetic random access memory including a memory element having a magnetized pinned layer with fixed direction of magnetization and a magnetic layer with changeable direction of magnetization stacked on one another; another element mounted on the substrate; and a pair of magnetic shielding layers which magnetically shield the memory element, the magnetic shielding layers located relatively above and below the memory element and within a region corresponding to an area occupied by the memory element.

    摘要翻译： 一种磁存储器件，其中MRAM元件与大的外部磁场磁屏蔽。 磁存储器件包括：基片; 安装在基板上的磁性随机存取存储器，所述磁性随机存取存储器包括具有固定磁化方向的磁化钉扎层和具有可变方向磁化的磁性层彼此叠置的存储元件; 安装在基板上的另一元件; 以及一对磁屏蔽层，其对存储元件进行磁屏蔽，磁屏蔽层位于相对于存储元件的上方和下方并且在对应于存储元件所占据的区域的区域内。

    Storage element and memory
    7.
    发明授权
    Storage element and memory 有权
    存储元件和存储器

    公开(公告)号：US08339840B2

    公开(公告)日：2012-12-25

    申请号：US12668925

    申请日：2008-06-30

    申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228

    摘要： A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer is provided on the storage layer with an intermediate layer 16 interposed therebetween, the intermediate layer is formed of an insulator, the direction of magnetization of the storage layer is changed by injecting electrons spin-polarized in a lamination direction such that the information is recorded in the storage layer, and distortion is applied to the storage layer from an insulating layer which exists around the storage layer and has a smaller coefficient of thermal expansion than the storage layer. A wiring line for supplying a current flowing in the lamination direction of the storage element.

    摘要翻译： 提供了能够在不增加写入电流的情况下提高热稳定性的存储器。 存储器被配置为包括：存储元件，其具有根据磁性物质的磁化状态保存信息的存储层，并且其中在存储层上设置有中间层16的磁化固定层，中间层 层由绝缘体形成，通过在层叠方向注入电子自旋极化来改变存储层的磁化方向，使得信息被记录在存储层中，并且从绝缘层向存储层施加失真 其存在于存储层周围并且具有比存储层更小的热膨胀系数。 一种用于提供在存储元件的层叠方向上流动的电流的布线。