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    Magnetic memory device
    3.
    发明申请
    Magnetic memory device 审中-公开
    磁存储器件

    公开(公告)号：US20050226030A1

    公开(公告)日：2005-10-13

    申请号：US10504626

    申请日：2003-12-12

    申请人： Yoshihiro Kato ,  Katsumi Okayama ,  Kaoru Kobayashi ,  Tetsuya Yamamoto ,  Minoru Ikarashi

    发明人： Yoshihiro Kato ,  Katsumi Okayama ,  Kaoru Kobayashi ,  Tetsuya Yamamoto ,  Minoru Ikarashi

    IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L23/00 ,  H01L23/495 ,  H01L23/552 ,  H01L27/105 ,  H01L43/02 ,  H01L43/08 ,  G11C11/00

    CPC分类号： H01L23/49575 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A magnetic memory device in which an MRAM element is magnetically shielded from a large external magnetic field in an satisfactory manner, making it possible to surely achieve an operation free of problems in a magnetic field generated by the environment in which the MRAM element is used. A magnetic random access memory (MRAM) (30) is constituted by a TMR element (10) having a magnetized pinned layer (4), (6) with fixed direction of magnetization and a magnetic layer (memory layer) (2) with changeable direction of magnetization stacked on one another, mounted on a substrate together with another element (38), such as a DRAM, wherein a magnetic shielding layer (33), (34) is formed in a region corresponding to an area occupied by the MRAM element (30) or/and a magnetic shielding layer (33), (34) is with a distance of 15 mm or less between the opposite sides (especially, a length or a width).

    摘要翻译： 一种磁记录装置，其中MRAM元件以令人满意的方式从大的外部磁场磁屏蔽，使得可以可靠地实现在由使用MRAM元件的环境产生的磁场中没有问题的操作。 磁性随机存取存储器（MRAM）（30）由具有固定磁化方向的磁化钉扎层（4），（6）的TMR元件（10）和具有可变形的磁性层（存储层）（2）构成 彼此堆叠的磁化方向，与诸如DRAM的另一元件（38）一起安装在基板上，其中在与MRAM占据的区域对应的区域中形成磁屏蔽层（33）（34） 元件（30）或/和磁屏蔽层（33），（34）在相对侧（特别是长度或宽度）之间的距离为15mm以下。

    MAGNETIC MEMORY DEVICE
    4.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开
    磁记忆装置

    公开(公告)号：US20080197434A1

    公开(公告)日：2008-08-21

    申请号：US12101607

    申请日：2008-04-11

    申请人： Yoshihiro Kato ,  Katsumi Okayama ,  Kaoru Kobayashi ,  Tetsuya Yamamoto ,  Minoru Ikarashi

    发明人： Yoshihiro Kato ,  Katsumi Okayama ,  Kaoru Kobayashi ,  Tetsuya Yamamoto ,  Minoru Ikarashi

    IPC分类号： H01L23/552 ,  H01L29/82

    CPC分类号： H01L23/49575 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A magnetic memory device in which an MRAM element is magnetically shielded from large external magnetic fields. The magnetic memory device includes: a substrate; a magnetic random access memory mounted on the substrate, the magnetic random access memory including a memory element having a magnetized pinned layer with fixed direction of magnetization and a magnetic layer with changeable direction of magnetization stacked on one another; another element mounted on the substrate; and a pair of magnetic shielding layers which magnetically shield the memory element, the magnetic shielding layers located relatively above and below the memory element and within a region corresponding to an area occupied by the memory element.

    摘要翻译： 一种磁存储器件，其中MRAM元件与大的外部磁场磁屏蔽。 磁存储器件包括：基片; 安装在基板上的磁性随机存取存储器，所述磁性随机存取存储器包括具有固定磁化方向的磁化钉扎层和具有可变方向磁化的磁性层彼此叠置的存储元件; 安装在基板上的另一元件; 以及一对磁屏蔽层，其对存储元件进行磁屏蔽，磁屏蔽层位于相对于存储元件的上方和下方并且在对应于存储元件所占据的区域的区域内。

    Magnetic shield member, magnetic shield structure, and magnetic memory device
    10.
    发明申请
    Magnetic shield member, magnetic shield structure, and magnetic memory device 失效
    磁屏蔽构件，磁屏蔽结构和磁存储装置

    公开(公告)号：US20050230788A1

    公开(公告)日：2005-10-20

    申请号：US11053650

    申请日：2005-02-08

    申请人： Yoshihiro Kato ,  Yoshinori Ito ,  Tatsushiro Hirata ,  Katsumi Okayama ,  Kaoru Kobayashi

    发明人： Yoshihiro Kato ,  Yoshinori Ito ,  Tatsushiro Hirata ,  Katsumi Okayama ,  Kaoru Kobayashi

    IPC分类号： H01L23/00 ,  G11C11/16 ,  H01L21/8246 ,  H01L23/552 ,  H01L27/105

    CPC分类号： H01L23/552 ,  G11C11/16 ,  H01L2924/0002 ,  H01L2924/00

    摘要： It is an object of the invention to relax magnetic saturation and realize a high-performance magnetic shield effect that is suitable for magnetic devices such as an MRAM. A magnetic shield member of the invention is suitable for a magnetic memory device in which a magnetic random access memory (MRAM) consisting of a TMR element formed by stacking a magnetization fixed layer with a direction of magnetization fixed and a magnetic layer, in which a direction of magnetization can be changed, via a tunnel barrier layer is sealed by a sealing material such as resin. A planar shape or a sectional shape of magnetic shield plates provided on the sealing material in order to magnetically shield the MRAM is a shape in which a side substantially perpendicular to a direction of an outer magnetic field and a side substantially parallel to the direction of an outer magnetic field are not orthogonal to each other, in particular, circular, polygonal, or the like, whereby it is possible to relax magnetic saturation of the magnetic shield plate and keep the magnetic shield effect.

    摘要翻译： 本发明的目的是松弛磁饱和，实现适用于MRAM等磁性装置的高性能磁屏蔽效果。 本发明的磁屏蔽部件适用于磁性随机存取存储器（MRAM），其中磁性随机存取存储器（MRAM）由通过堆积固定磁化方向的磁化固定层形成的TMR元件和磁性层组成，其中， 磁化方向可以改变，通过隧道阻挡层被树脂等密封材料密封。 设置在密封材料上以磁屏蔽MRAM的磁屏蔽板的平面形状或截面形状是这样的形状，其中，基本上垂直于外部磁场的方向的侧和基本上平行于 外部磁场彼此不正交，特别是圆形，多边形等，从而可以缓和磁屏蔽板的磁饱和并保持磁屏蔽效果。