发明申请
- 专利标题： SEMICONDUCTOR COMPONENT WITH VERTICAL STRUCTURES HAVING A HIGH ASPECT RATIO AND METHOD
- 专利标题（中）： 具有高度比例和方法的垂直结构的半导体元件
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申请号： US12021736申请日： 2008-01-29
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公开(公告)号： US20080197441A1公开(公告)日： 2008-08-21
- 发明人: Anton Mauder , Helmut Strack , Armin Willmeroth , Hans-Joachim Schulze
- 申请人： Anton Mauder , Helmut Strack , Armin Willmeroth , Hans-Joachim Schulze
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 优先权： DE102007004320.3 20070129
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L21/762
摘要：
A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric.