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1.发明授权Power semiconductor component with charge compensation structure and method for the fabrication thereof 有权具有电荷补偿结构的功率半导体元件及其制造方法公开(公告)号：US07554137B2
公开(公告)日：2009-06-30
申请号：US11552804
申请日：2006-10-25
申请人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
发明人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
IPC分类号： H01L29/732 , H01L29/423
CPC分类号： H01L29/7811 , H01L21/2205 , H01L21/2252 , H01L21/2255 , H01L23/291 , H01L23/298 , H01L29/0634 , H01L29/0661 , H01L29/1095 , H01L29/1604 , H01L29/1608 , H01L29/165 , H01L29/66712 , H01L29/7802 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component (1) with charge compensation structure (3) has a semiconductor body (4) having a drift path (5) between two electrodes (6, 7). The drift path (5) has drift zones of a first conduction type, which provide a current path between the electrodes (6, 7) in the drift path, while charge compensation zones (11) of a complementary conduction type constrict the current path of the drift path (5). For this purpose, the drift path (5) has two alternately arranged, epitaxially grown diffusion zone types (9, 10), the first drift zone type (9) having monocrystalline semiconductor material on a monocrystalline substrate (12), and a second drift zone type (10) having monocrystalline semiconductor material in a trench structure (13), with complementarily doped walls (14, 15), the complementarily doped walls (14, 15) forming the charge compensation zones (11).
摘要翻译： 具有电荷补偿结构（3）的半导体部件（1）具有在两个电极（6,7）之间具有漂移路径（5）的半导体本体（4）。 漂移路径（5）具有第一导电类型的漂移区，其在漂移路径中的电极（6,7）之间提供电流路径，而互补导电类型的电荷补偿区域（11） 漂移路径（5）。 为此，漂移路径（5）具有两个交替布置的外延生长的扩散区类型（9,10），在单晶衬底（12）上具有单晶半导体材料的第一漂移区类型（9）和第二漂移 在沟槽结构（13）中具有单晶半导体材料的具有互补掺杂壁（14,15）的区域型（10），形成电荷补偿区（11）的互补掺杂壁（14,15）。
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2.发明申请Power Semiconductor Component With Charge Compensation Structure And Method For The Fabrication Thereof 有权具有电荷补偿结构的功率半导体元件及其制造方法公开(公告)号：US20070108512A1
公开(公告)日：2007-05-17
申请号：US11552804
申请日：2006-10-25
申请人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
发明人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/7811 , H01L21/2205 , H01L21/2252 , H01L21/2255 , H01L23/291 , H01L23/298 , H01L29/0634 , H01L29/0661 , H01L29/1095 , H01L29/1604 , H01L29/1608 , H01L29/165 , H01L29/66712 , H01L29/7802 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a power semiconductor component (1) with charge compensation structure (3) and a method for the fabrication thereof. For this purpose, the power semiconductor component (1) has a semiconductor body (4) having a drift path (5) between two electrodes (6, 7). The drift path (5) has drift zones of a first conduction type, which provide a current path between the electrodes (6, 7) in the drift path, while charge compensation zones (11) of a complementary conduction type constrict the current path of the drift path (5). For this purpose, the drift path (5) has two alternately arranged, epitaxially grown diffusion zone types (9, 10), the first drift zone type (9) having monocrystalline semiconductor material on a monocrystalline substrate (12), and a second drift zone type (10) having monocrystalline semiconductor material in a trench structure (13), with complementarily doped walls (14, 15), the complementarily doped walls (14, 15) forming the charge compensation zones (11).
摘要翻译： 本发明涉及具有电荷补偿结构（3）的功率半导体元件（1）及其制造方法。 为此，功率半导体部件（1）具有在两个电极（6,7）之间具有漂移路径（5）的半导体本体（4）。 漂移路径（5）具有第一导电类型的漂移区，其在漂移路径中的电极（6,7）之间提供电流路径，而互补导电类型的电荷补偿区域（11） 漂移路径（5）。 为此，漂移路径（5）具有两个交替布置的外延生长的扩散区类型（9,10），在单晶衬底（12）上具有单晶半导体材料的第一漂移区类型（9）和第二漂移 在沟槽结构（13）中具有单晶半导体材料的具有互补掺杂壁（14,15）的区域型（10），形成电荷补偿区（11）的互补掺杂壁（14,15）。
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3.发明授权Power semiconductor component with charge compensation structure and method for the fabrication thereof 有权具有电荷补偿结构的功率半导体元件及其制造方法公开(公告)号：US08263450B2
公开(公告)日：2012-09-11
申请号：US12350776
申请日：2009-01-08
申请人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
发明人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
IPC分类号： H01L21/00
CPC分类号： H01L29/7811 , H01L21/2205 , H01L21/2252 , H01L21/2255 , H01L23/291 , H01L23/298 , H01L29/0634 , H01L29/0661 , H01L29/1095 , H01L29/1604 , H01L29/1608 , H01L29/165 , H01L29/66712 , H01L29/7802 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.
摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。
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4.发明授权Semiconductor component with vertical structures having a high aspect ratio and method 有权具有高纵横比的垂直结构的半导体元件和方法公开(公告)号：US08513730B2
公开(公告)日：2013-08-20
申请号：US12021736
申请日：2008-01-29
CPC分类号： H01L21/76224 , H01L29/0653 , H01L29/0878 , H01L29/161 , H01L29/165 , H01L29/407 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7806 , H01L29/7813 , H01L29/7831
摘要： A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric.
摘要翻译： 具有高纵横比和垂直结构的半导体元件。 在一个实施例中，漂移区布置在第一和第二组分区之间。 漂移控制区在第一方向上布置成与漂移区相邻。 电介质层布置在漂移区和漂移控制区之间，其中漂移区具有至少在从电介质进行的部分中的变化的掺杂和/或变化的材料组成。
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5.发明申请POWER SEMICONDUCTOR COMPONENT WITH CHARGE COMPENSATION STRUCTURE AND METHOD FOR THE FABRICATION THEREOF 有权具有电荷补偿结构的功率半导体元件及其制造方法公开(公告)号：US20090130806A1
公开(公告)日：2009-05-21
申请号：US12350776
申请日：2009-01-08
申请人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
发明人： Stefan Sedlmaier , Hans-Joachim Schulze , Anton Mauder , Helmut Strack , Armin Willmeroth , Frank Pfirsch
IPC分类号： H01L21/336
CPC分类号： H01L29/7811 , H01L21/2205 , H01L21/2252 , H01L21/2255 , H01L23/291 , H01L23/298 , H01L29/0634 , H01L29/0661 , H01L29/1095 , H01L29/1604 , H01L29/1608 , H01L29/165 , H01L29/66712 , H01L29/7802 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.
摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。
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6.发明申请SEMICONDUCTOR COMPONENT WITH VERTICAL STRUCTURES HAVING A HIGH ASPECT RATIO AND METHOD 有权具有高度比例和方法的垂直结构的半导体元件公开(公告)号：US20080197441A1
公开(公告)日：2008-08-21
申请号：US12021736
申请日：2008-01-29
IPC分类号： H01L23/58 , H01L21/762
CPC分类号： H01L21/76224 , H01L29/0653 , H01L29/0878 , H01L29/161 , H01L29/165 , H01L29/407 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7806 , H01L29/7813 , H01L29/7831
摘要： A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric.
摘要翻译： 具有高纵横比和垂直结构的半导体元件。 在一个实施例中，漂移区布置在第一和第二组分区之间。 漂移控制区在第一方向上布置成与漂移区相邻。 电介质层布置在漂移区和漂移控制区之间，其中漂移区具有至少在从电介质进行的部分中的变化的掺杂和/或变化的材料组成。
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7.发明申请METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE 审中-公开用于制造TRENCH结构的方法和包括TRENCH结构的半导体布置公开(公告)号：US20080067626A1
公开(公告)日：2008-03-20
申请号：US11834154
申请日：2007-08-06
申请人： Franz Hirler , Thoralf Kautzsch , Anton Mauder , Michael Rueb , Hans-Joachim Schulze , Helmut Strack , Armin Willmeroth
发明人： Franz Hirler , Thoralf Kautzsch , Anton Mauder , Michael Rueb , Hans-Joachim Schulze , Helmut Strack , Armin Willmeroth
CPC分类号： H01L21/76224 , H01L21/3247 , H01L29/0653 , H01L29/407 , H01L29/66621 , H01L29/7803 , H01L29/7804
摘要： A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.
摘要翻译： 一种半导体器件，其中制造从半导体本体的表面进入半导体本体的第一沟槽部分。 在表面上方和第一沟槽部分之上产生半导体层。 在半导体层中产生另一沟槽部分，使得第一沟槽部分和另外的沟槽部分形成连续的沟槽结构。
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公开(公告)号：US10651037B2
公开(公告)日：2020-05-12
申请号：US11232735
申请日：2005-09-22
IPC分类号： H01L21/265 , H01L29/66 , H01L21/304 , H01L29/10 , H01L21/324 , H01L21/263 , H01L29/08
摘要： One embodiment of the invention relates to a method for fabricating a doped semiconductor zone in a semiconductor body. The method includes implanting dopant particles via one side into the semiconductor body or applying a layer containing dopant particles to one side of the semiconductor body. The method also includes irradiating the semiconductor body via the one side with further particles at least in the region containing the dopant particles. The method finally includes carrying out a thermal treatment by means of which the semiconductor body is heated, at least in the region containing the dopant particles, to a predetermined temperature in order to activate the implanted dopant particles, said temperature being less than 700° C.
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9.发明授权Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same 有权包括这种类型的电容器结构的半导体器件和半导体器件的沟槽结构中的电容器结构及其制造方法公开(公告)号：US07795660B2
公开(公告)日：2010-09-14
申请号：US11223210
申请日：2005-09-12
IPC分类号： H01L29/94
CPC分类号： H01L29/66181 , H01L27/10861 , H01L28/82
摘要： A capacitor structure includes: a number of conductive regions of metallic and/or semiconducting materials and/or conductive metal compounds thereof, the conductive regions being arranged as stacked layers in a trench structure of a semiconductor device; and a dielectric surrounding the conductive regions.
摘要翻译： 电容器结构包括：多个金属和/或半导体材料的导电区域和/或其导电金属化合物，所述导电区域被布置为半导体器件的沟槽结构中的堆叠层; 以及围绕导电区域的电介质。
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公开(公告)号：US20050116249A1
公开(公告)日：2005-06-02
申请号：US10971572
申请日：2004-10-22
申请人： Anton Mauder , Frank Hille , Vytla Krishna , Elmar Falck , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack
发明人： Anton Mauder , Frank Hille , Vytla Krishna , Elmar Falck , Hans-Joachim Schulze , Franz-Josef Niedernostheide , Helmut Strack
IPC分类号： H01L21/329 , H01L29/32 , H01L29/861 , H01L21/00
CPC分类号： H01L21/263 , H01L29/32 , H01L29/6609 , H01L29/861
摘要： A semiconductor diode (30) has an anode (32), a cathode (33) and a semiconductor volume (31) provided between the anode (32) and the cathode (33). An electron mobility and/or hole mobility within a zone (34) of the semiconductor volume (31) that is situated in front of the cathode (33) is reduced relative to the rest of the semiconductor volume (31).
摘要翻译： 半导体二极管（30）具有设置在阳极（32）和阴极（33）之间的阳极（32），阴极（33）和半导体体积（31）。 位于阴极（33）前方的半导体体积（31）的区域（34）内的电子迁移率和/或空穴迁移率相对于半导体体积（31）的其余部分减小。
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