发明申请
- 专利标题： SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题（中）： 固态成像装置及其制造方法
-
申请号： US11778314申请日： 2007-07-16
-
公开(公告)号： US20080210985A1公开(公告)日： 2008-09-04
- 发明人: Masaaki Ogawa , Takashi Doi , Toshihiko Kitamura
- 申请人： Masaaki Ogawa , Takashi Doi , Toshihiko Kitamura
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2006-200920 20060724
- 主分类号： H01L27/148
- IPC分类号： H01L27/148 ; H01L31/101 ; H01L31/18
摘要：
A solid-state imaging device, includes: a substrate where a region of a first conductivity type is formed on at least a portion of a surface thereof; a region of a second conductivity type formed on at least a portion of a surface of the region of the first conductivity type; a multilayer wiring layer formed on the substrate; and a layer of the second conductivity type formed directly above the region of the second conductivity type in the multilayer wiring layer, connected to the region of the second conductivity type. A concentration of impurities in the layer of the second conductivity type is lower with decreasing proximity to the region of the second conductivity type.
公开/授权文献
- US07550792B2 Solid-state imaging device and manufacturing method thereof 公开/授权日：2009-06-23
信息查询
IPC分类:
