发明申请
US20080210998A1 Method for manufacturing material layer, method for manufacturing ferroelectric capacitor using the same, ferroelectric capacitor manufactured by the same method, semiconductor memory device having ferroelectric capacitor and manufacturing method thereof
审中-公开
用于制造材料层的方法，使用该方法制造铁电电容器的方法，通过相同方法制造的铁电电容器，具有铁电电容器的半导体存储器件及其制造方法
- 专利标题： Method for manufacturing material layer, method for manufacturing ferroelectric capacitor using the same, ferroelectric capacitor manufactured by the same method, semiconductor memory device having ferroelectric capacitor and manufacturing method thereof
- 专利标题（中）： 用于制造材料层的方法，使用该方法制造铁电电容器的方法，通过相同方法制造的铁电电容器，具有铁电电容器的半导体存储器件及其制造方法
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申请号： US12068172申请日： 2008-02-04
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公开(公告)号： US20080210998A1公开(公告)日： 2008-09-04
- 发明人: June-mo Koo , Bum-seok Seo , Young-soo Park , Jung-hyun Lee , Sang-min Shin , Suk-pil Kim
- 申请人： June-mo Koo , Bum-seok Seo , Young-soo Park , Jung-hyun Lee , Sang-min Shin , Suk-pil Kim
- 优先权： KR10-2005-0063302 20050713
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/8246
摘要：
Provided is a method for manufacturing a material layer capable of increasing the deposition rate of a noble metal layer on a ferroelectric layer, a method for manufacturing a ferroelectric capacitor using the same, a ferroelectric capacitor manufactured by the same method, and a semiconductor memory device having the ferroelectric capacitor and a manufacturing method thereof. According to a method for manufacturing the material layer, a ferroelectric layer is formed. The ferroelectric layer may be exposed to seed plasma, and a material layer including a source material of the seed plasma may be formed on a region of the ferroelectric layer exposed to the seed plasma.