发明申请
US20080217707A1 TRANSISTOR HAVING GATE AND BODY IN DIRECT SELF-ALIGNED CONTACT AND RELATED METHODS
失效
在直接自对准接触中具有门和体的晶体管和相关方法
- 专利标题： TRANSISTOR HAVING GATE AND BODY IN DIRECT SELF-ALIGNED CONTACT AND RELATED METHODS
- 专利标题（中）： 在直接自对准接触中具有门和体的晶体管和相关方法
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申请号： US11683470申请日： 2007-03-08
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公开(公告)号： US20080217707A1公开(公告)日： 2008-09-11
- 发明人: Brent A. Anderson , Andres Bryant , William F. Clark , Edward J. Nowak
- 申请人： Brent A. Anderson , Andres Bryant , William F. Clark , Edward J. Nowak
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A transistor having a directly contacting gate and body and related methods are disclosed. In one embodiment, the transistor includes a gate; a body; and a dielectric layer extending over the body to insulate the gate from the body along an entire surface of the body except along a portion of at least a sidewall of the body, wherein the gate is in direct contact with the body at the portion. One method may include providing the body; forming a sacrificial layer that contacts at least a portion of a sidewall of the body; forming a dielectric layer about the body except at the at least a portion; removing the sacrificial layer; and forming the gate about the body such that the gate contacts the at least a portion of the sidewall of the body.
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