发明申请
- 专利标题： SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND FABRICATION PROCESS THEREOF
- 专利标题（中）： 半导体集成电路器件及其制造工艺
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申请号： US12126386申请日： 2008-05-23
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公开(公告)号： US20080230916A1公开(公告)日： 2008-09-25
- 发明人: Tatsuyuki Saito , Junji Noguchi , Hizuru Yamaguchi , Nobuo Owada
- 申请人： Tatsuyuki Saito , Junji Noguchi , Hizuru Yamaguchi , Nobuo Owada
- 优先权： JP9-234236 19970829; JP10-182813 19980629
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
A semiconductor IC device includes a buried interconnection in interconnection layers over a semiconductor substrate, in which electrical connection of interconnections are provided over and under an interconnection layer of an embedded interconnection from among the interconnection layers such that a first connecting conductor portion within a connecting hole extending from an upper interconnection toward the interconnection layer of a predetermined buried interconnection and a second connecting conductor portion within the connecting hole extending from a lower interconnection toward the interconnection layer of the predetermined buried interconnection are electrically connected via a connecting conductor portion for relay in the connecting groove of the interconnection layer of a predetermined buried interconnection. The connecting conductor portion for relay is sized so that the length of the connecting conductor portion for relay in an extending direction of the predetermined buried interconnection is longer than that of the connecting hole.
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