公开(公告)号：US09466477B2

公开(公告)日：2016-10-11

申请号：US12849398

申请日：2010-08-03

申请人： Tatsuyuki Saito ,  Masanori Sakai ,  Yukinao Kaga ,  Takashi Yokogawa

发明人： Tatsuyuki Saito ,  Masanori Sakai ,  Yukinao Kaga ,  Takashi Yokogawa

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01L21/285

CPC分类号： H01L21/0228 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/52 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02225 ,  H01L21/02263 ,  H01L21/02271 ,  H01L21/28506

摘要： There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.

摘要翻译： 提供了制造半导体器件，衬底处理设备和半导体器件的方法。 该方法允许快速形成导电膜，其由于其致密的结构而具有从源极渗透的低浓度的杂质和低电阻率。 该方法通过同时将两种或更多种源提供到处理室中以在放置在处理室中的基板上形成膜来执行。 该方法包括：以第一供应流量将至少一种源提供到处理室中来执行第一源供应过程; 以及通过以与第一供给流量不同的第二供给流量将至少一种源提供到处理室来执行第二源供给处理。

公开(公告)号：US08857890B2

公开(公告)日：2014-10-14

申请号：US13702326

申请日：2011-06-03

申请人： Mitsuhiro Okada ,  Ryuichi Nakajima ,  Tatsuyuki Saito ,  Zentaro Yamaguchi

发明人： Mitsuhiro Okada ,  Ryuichi Nakajima ,  Tatsuyuki Saito ,  Zentaro Yamaguchi

IPC分类号： B60J5/04 ,  H02K7/116 ,  E05F15/14 ,  H02K1/30 ,  H02K7/10 ,  H02K5/24 ,  H02K1/27

CPC分类号： B60J5/047 ,  E05F15/145 ,  E05F15/146 ,  E05F15/643 ,  E05F15/646 ,  E05Y2900/531 ,  H02K1/2733 ,  H02K1/30 ,  H02K5/24 ,  H02K7/1004 ,  H02K7/116

摘要： A hypocycloid reducer 70 for reducing rotation of a flat motor 60 to output the speed-reduced rotation to a drum is provided between the drum and the flat motor 60, a rotor shalt member 65 which is rotated with the same rotation number as the flat motor 60 is axially aligned with the drum is provided on the same side as the flat motor 60. An output rotation body 74 for outputting the speed-reduced rotation is axially aligned with the drum and provided on the same side as the drum. Since the rotor shaft member 65 and the output rotation body 74 are axially aligned with the drum, turning force can be transmitted bi-directionally between the rotor shaft member 65 and the output rotation body 74. Therefore, it is possible to eliminate an electromagnetic clutch to reduce the driving apparatus in size and weight, and since wires and control logic of the electromagnetic clutch are not needed for the driving apparatus, the driving apparatus can be reduced in production cost.

摘要翻译： 在鼓和平面电动机60之间设置有用于减小平面电动机60的旋转以将减速旋转输出到鼓的低音圈减速器70，以与平面电动机相同的转数旋转的转子轴部件65 60与滚筒轴向对齐设置在与平坦马达60相同的一侧上。用于输出减速旋转的输出旋转体74与滚筒轴向对齐并设置在与滚筒相同的一侧。 由于转子轴构件65和输出旋转体74与滚筒轴向对准，因此转动力可以在转子轴构件65和输出旋转体74之间双向传递。因此，可以消除电磁离合器 以减小驱动装置的尺寸和重量，并且由于驱动装置不需要电磁离合器的电线和控制逻辑，所以可以降低驱动装置的生产成本。

公开(公告)号：US08643247B2

公开(公告)日：2014-02-04

申请号：US13859470

申请日：2013-04-09

申请人： Tatsuyuki Saito ,  Ryuichi Takakusagi ,  Toshiyuki Kimura ,  Yoshichika Kawashima ,  Kenji Sakata

发明人： Tatsuyuki Saito ,  Ryuichi Takakusagi ,  Toshiyuki Kimura ,  Yoshichika Kawashima ,  Kenji Sakata

IPC分类号： H02K13/00

CPC分类号： H02K3/28 ,  H02K7/1166 ,  H02K13/10 ,  H02K23/04 ,  H02K23/34

摘要： Disclosed is an electric motor including a yoke formed in a bottomed cylindrical shape; permanent magnets arranged on an inner peripheral surface of the yoke; an armature including a rotary shaft journalled on the yoke, an armature core formed with a plurality of teeth and fixed onto the rotary shaft, an armature coil wound around the teeth of the armature core, a commutator having a plurality of segments and being fixed onto the rotary shaft, and a connecting wire connecting two segments arranged to face each other back to back around the rotary shaft, the armature being surrounded by the permanent magnets and accommodated within the yoke; and a first brush, a second brush, and a third brush coming into sliding contact with the segments of the commutator of the armature.

摘要翻译： 公开了一种电动马达，其包括形成为有底圆筒形状的磁轭; 设置在所述轭的内周面上的永磁体; 一个电枢，包括一个轴颈轴颈上的旋转轴，一个形成有多个齿并固定在旋转轴上的电枢铁芯，一个缠绕在电枢铁心上的电枢线圈，一个具有多个段的换向器，并固定在 旋转轴和连接线，其将彼此相对地彼此面对地布置成围绕旋转轴彼此相对地连接，电枢被永磁体包围并容纳在轭内; 以及第一刷子，第二刷子和与衔铁的换向器的段滑动接触的第三刷子。

公开(公告)号：US08618712B2

公开(公告)日：2013-12-31

申请号：US13859458

申请日：2013-04-09

申请人： Tatsuyuki Saito ,  Ryuichi Takakusagi ,  Toshiyuki Kimura ,  Yoshichika Kawashima ,  Kenji Sakata

发明人： Tatsuyuki Saito ,  Ryuichi Takakusagi ,  Toshiyuki Kimura ,  Yoshichika Kawashima ,  Kenji Sakata

IPC分类号： H02K13/00

CPC分类号： H02K3/28 ,  H02K7/1166 ,  H02K13/10 ,  H02K23/04 ,  H02K23/34

摘要： Disclosed is a windshield wiper motor having a reduction mechanism unit and an electric motor. The electric motor of the windshield wiper motor includes a yoke formed in a bottomed cylindrical shape; permanent magnets arranged on an inner peripheral surface of the yoke; an armature including a rotary shaft journalled to the yoke, an armature core where a plurality of teeth are formed and fixed onto the rotary shaft, an armature coil wound around teeth of the armature core, a commutator having a plurality of segments and being fixed onto the rotary shaft, and a plurality of connecting wires connecting two segments arranged to face each other back to back around the rotary shaft, being surrounded by the permanent magnets and arranged within the yoke; and a first brush, a second brush, and a third brush coming into sliding contact with the segments of the commutator of the armature.

摘要翻译： 公开了一种具有减速机构单元和电动机的挡风玻璃刮水器电动机。 挡风玻璃刮水器电动机的电动机包括形成为有底圆筒形的磁轭; 设置在所述轭的内周面上的永磁体; 一个电枢，包括一个旋转轴，该旋转轴安装在磁轭上，一个电枢磁芯，其中多个齿形成并固定在旋转轴上，电枢线圈缠绕在电枢铁芯的齿上，一个换向器具有多个段并固定在 旋转轴和多个连接线，其连接两个彼此相对地相对地彼此相对地相对地布置的旋转轴，所述多个连接线被所述永磁体包围并设置在所述轭内; 以及第一刷子，第二刷子和与衔铁的换向器的段滑动接触的第三刷子。

公开(公告)号：US20120280369A1

公开(公告)日：2012-11-08

申请号：US13498020

申请日：2010-12-15

申请人： Tatsuyuki Saito ,  Kazuhiro Yuasa ,  Yoshiro Hirose ,  Yuji Takebayashi ,  Ryota Sasajima ,  Katsuhiko Yamamoto ,  Hirohisa Yamazaki ,  Shintaro Kogura ,  Hirotaka Hamamura

发明人： Tatsuyuki Saito ,  Kazuhiro Yuasa ,  Yoshiro Hirose ,  Yuji Takebayashi ,  Ryota Sasajima ,  Katsuhiko Yamamoto ,  Hirohisa Yamazaki ,  Shintaro Kogura ,  Hirotaka Hamamura

IPC分类号： C23C16/52 ,  H01L29/02 ,  H01L21/02

CPC分类号： C23C16/45563 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45561 ,  C23C16/45578 ,  C23C16/56 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02356 ,  H01L28/40 ,  H01L28/60

摘要： There is provided a method for manufacturing a semiconductor device, comprising simultaneously or alternately exposing a substrate, which has two or more kinds of thin films having different elemental components laminated or exposed; and performing different modification treatments to the thin films respectively.

摘要翻译： 提供了一种用于制造半导体器件的方法，包括同时或交替地暴露具有层压或暴露的具有不同元素组分的两种或更多种薄膜的衬底; 并对薄膜进行不同的改性处理。

公开(公告)号：US20100304567A1

公开(公告)日：2010-12-02

申请号：US12801127

申请日：2010-05-24

申请人： Masanori SAKAI ,  Tatsuyuki SAITO

发明人： Masanori SAKAI ,  Tatsuyuki SAITO

IPC分类号： H01L21/3205 ,  B05C11/00

CPC分类号： H01L21/28556 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76862

摘要： A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCl4 and NH3 reacting with TiCl4 to the wafer and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of TiCl4 and a second step of substituting the bonding branch contained in the TiN intermediate film by supplying H2 to the wafer, the first step and the second step being performed in this order.

摘要翻译： 通过向晶片供给TiCl4和NH3与TiCl4反应而形成TiN中间膜的第一步骤形成TiN膜，并且控制用于使没有经历取代反应的键合分支的处理条件保持在 在TiCl4的一部分处的预定浓度，以及通过向晶片供给H2来代替包含在TiN中间膜中的结合分支的第二步骤，第一步骤和第二步骤依次进行。

公开(公告)号：US20100297846A1

公开(公告)日：2010-11-25

申请号：US12801082

申请日：2010-05-20

申请人： Yukinao Kaga ,  Tatsuyuki Saito ,  Masanori Sakai

发明人： Yukinao Kaga ,  Tatsuyuki Saito ,  Masanori Sakai

IPC分类号： H01L21/285 ,  C23C16/06 ,  C23C16/34

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45544 ,  H01L21/76841

摘要： A method of manufacturing a semiconductor device includes the steps of: forming a first metal film on the substrate placed in a processing chamber by alternately supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber more than once; forming a second metal film on the substrate by simultaneously supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber once so that the metal compound and the reactant gas are mixed with each other; and modifying at least one of the first metal film and the second metal film is modified using at least one of the reactant gas and an inert gas after at least one of the alternate supply process and the simultaneous supply process. It thus becomes possible to provide a dense, low-resistive metal film having a smooth film surface with a better quality in comparison with a titanium nitride film formed by the CVD method at a higher deposition rate, that is, at a higher productivity, in comparison with a titanium nitride film formed by the ALD method at a low temperature.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：通过交替地供给至少一种作为无机原料的金属化合物和具有反应性的反应物气体，在放置在处理室中的基板上形成第一金属膜 金属化合物对处理室不止一次; 通过同时将至少一种作为无机原料的金属化合物和与金属化合物具有反应性的反应物气体同时供给到处理室，从而在基板上形成第二金属膜，使得金属化合物和反应气体 相互混合; 并且在交替供给处理和同时供给处理中的至少一个之后，使用至少一种反应气体和惰性气体来修饰第一金属膜和第二金属膜中的至少一个。 因此，与通过CVD法形成的氮化钛膜以更高的生产率，即更高的生产率相比，可以提供具有光滑膜表面的致密的低电阻金属膜，具有更好的质量 与在低温下通过ALD法形成的氮化钛膜进行比较。

公开(公告)号：US07323781B2

公开(公告)日：2008-01-29

申请号：US10807222

申请日：2004-03-24

申请人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

发明人： Junji Noguchi ,  Takayuki Oshima ,  Noriko Miura ,  Kensuke Ishikawa ,  Tomio Iwaskai ,  Kiyomi Katsuyama ,  Tatsuyuki Saito ,  Tsuyoshi Tamaru ,  Hizuru Yamaguchi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76811 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76822 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

摘要翻译： 提高了布线的可靠性，其中包括以铜为主要成分的主导电膜。 在包括用作下层布线的布线的上表面的绝缘膜上形成由铜阻隔性优异的碳氮化硅膜形成的绝缘膜; 在绝缘膜上形成由与低介电常数材料膜具有优异粘合性的碳化硅膜形成的绝缘膜; 在绝缘膜上形成由作为层间绝缘膜的低介电常数材料形成的绝缘膜; 然后形成作为上层布线的布线。

公开(公告)号：US20060216925A1

公开(公告)日：2006-09-28

申请号：US11444316

申请日：2006-06-01

申请人： Kensuke Ishikawa ,  Tatsuyuki Saito ,  Masanori Miyauchi ,  Toshio Saito ,  Hiroshi Ashihara

发明人： Kensuke Ishikawa ,  Tatsuyuki Saito ,  Masanori Miyauchi ,  Toshio Saito ,  Hiroshi Ashihara

IPC分类号： H01L21/4763

CPC分类号： H01L21/2855 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.

公开(公告)号：US06756679B2

公开(公告)日：2004-06-29

申请号：US10233421

申请日：2002-09-04

申请人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

发明人： Junji Noguchi ,  Naofumi Ohashi ,  Kenichi Takeda ,  Tatsuyuki Saito ,  Hizuru Yamaguchii ,  Nobuo Owada

IPC分类号： H01L2348

CPC分类号： H01L21/0217 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/3212 ,  H01L21/32136 ,  H01L21/67115 ,  H01L21/68792 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.