发明申请
- 专利标题： PLASMA PROCESSING APPARATUS
- 专利标题（中）： 等离子体加工设备
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申请号： US12056665申请日： 2008-03-27
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公开(公告)号： US20080236749A1公开(公告)日： 2008-10-02
- 发明人: Chishio KOSHIMIZU , Naoki Matsumoto , Satoshi Tanaka , Toru Ito
- 申请人： Chishio KOSHIMIZU , Naoki Matsumoto , Satoshi Tanaka , Toru Ito
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-084706 20070328
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.
公开/授权文献
- US08298371B2 Plasma processing apparatus 公开/授权日：2012-10-30
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