公开(公告)号：US08824875B2

公开(公告)日：2014-09-02

申请号：US13034858

申请日：2011-02-25

Applicant: Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

Inventor： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo

IPC: A21B2/00 ,  F26B19/00

CPC classification number: H01L21/67115 ,  F27B17/0025 ,  F27D11/12

Abstract: There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.

Abstract translation: 提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。 该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带 与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。

公开(公告)号：US08777483B2

公开(公告)日：2014-07-15

申请号：US13231027

申请日：2011-09-13

Applicant: Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

Inventor： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

IPC: G01K1/00 ,  G01J5/00

CPC classification number: G01K11/12

Abstract: The temperature measuring apparatus includes: a light source; a first wavelength-dividing unit which wavelength-divides a light from the light source into m lights whose wavelength bands are different from one another; m first dividing units which divides each of the m lights from the first wavelength-dividing unit into n lights; a transmitting unit which transmits lights from the m first dividing unit to measurement points of an object to be measured; a light receiving unit which receives a light reflected by each of the measurement points; and a temperature calculating unit which calculates a temperature of each of the measurement points based on a waveform of the light received by the light receiving unit.

Abstract translation: 温度测量装置包括：光源; 将来自光源的光波长分割成波长彼此不同的m个光的第一波长分割单元; m个第一分割单元，其将每个m个光从第一波长分割单元分成n个灯; 发射单元，其将来自第m分割单元的光传输到被测量物体的测量点; 光接收单元，其接收由每个测量点反射的光; 以及温度计算单元，其基于由光接收单元接收的光的波形来计算每个测量点的温度。

公开(公告)号：US08764288B2

公开(公告)日：2014-07-01

申请号：US13476264

申请日：2012-05-21

Applicant: Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

Inventor： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC: G01J5/00 ,  G01B9/02

CPC classification number: G01J5/02 ,  G01K1/026 ,  G01K11/125

Abstract: A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.

Abstract translation: 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

公开(公告)号：US08741095B2

公开(公告)日：2014-06-03

申请号：US12415466

申请日：2009-03-31

Applicant: Chishio Koshimizu

Inventor： Chishio Koshimizu

IPC: C23C16/509 ,  H01L21/3065 ,  C23F1/00

CPC classification number: H01J37/32165 ,  H01J37/32091

Abstract: A plasma processing apparatus includes a vacuum evacuable processing chamber; a first electrode for supporting a substrate to be processed in the processing chamber; a processing gas supply unit for supplying a processing gas into a processing space; a plasma excitation unit for generating a plasma by exciting the processing gas in the processing chamber; a first radio frequency power supply unit for supplying a first radio frequency power to the first electrode to attract ions in the plasma to the substrate; and a first radio frequency power amplitude modulation unit for modulating an amplitude of the first radio frequency power at a predetermined interval. The plasma processing apparatus further includes a first radio frequency power frequency modulation unit for modulating a frequency of the first radio frequency power in substantially synchronously with the amplitude modulation of the first radio frequency power.

Abstract translation: 等离子体处理装置包括真空排气处理室; 用于在所述处理室中支撑待处理的基板的第一电极; 处理气体供应单元，用于将处理气体供应到处理空间中; 等离子体激发单元，用于通过激励处理室中的处理气体来产生等离子体; 第一射频电源单元，用于向第一电极提供第一射频功率以将等离子体中的离子吸引到衬底; 以及用于以预定间隔调制第一射频功率的幅度的第一射频功率幅度调制单元。 等离子体处理装置还包括第一射频功率频率调制单元，用于与第一射频功率的幅度调制基本同步地调制第一射频功率的频率。

公开(公告)号：US08513563B2

公开(公告)日：2013-08-20

申请号：US13403588

申请日：2012-02-23

Applicant: Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

Inventor： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

IPC: B23K10/00

CPC classification number: H01J37/32165 ,  H01J37/32082

Abstract: In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.

Abstract translation: 在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底 面对第一个电极。 第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。 此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。 此外，电感器电连接在第一电极和地电位之间。

公开(公告)号：US08426317B2

公开(公告)日：2013-04-23

申请号：US12791095

申请日：2010-06-01

Applicant: Chishio Koshimizu

Inventor： Chishio Koshimizu

IPC: H01L21/302

CPC classification number: H01J37/32623 ,  H01J37/32091 ,  H01J37/32642

Abstract: An optimum application voltage for reducing deposits on a peripheral portion of a substrate as well as improving a process result in balance is effectively found without changing a height of a focus ring. A plasma processing apparatus includes a focus ring which includes a dielectric ring provided so as to surround a substrate mounting portion of a mounting table and a conductive ring provided on the dielectric ring; a voltage sensor configured to detect a floating voltage of the conductive ring; a DC power supply configured to apply a DC voltage to the conductive ring. An optimum voltage to be applied to the conductive ring is obtained based on a floating voltage actually detected from the conductive ring, and the optimum application voltage is adjusted based on a variation in the actually detected floating voltage for each plasma process.

Abstract translation: 在不改变聚焦环的高度的情况下，有效地发现用于减少衬底的周边部分上的沉积物以及改善平衡处理结果的最佳施加电压。 一种等离子体处理装置包括聚焦环，该聚焦环包括设置成围绕安装台的基板安装部分设置的介质环和设置在介质环上的导电环; 电压传感器，被配置为检测所述导电环的浮置电压; DC电源，被配置为向所述导电环施加DC电压。 基于从导电环实际检测到的浮动电压，获得施加到导电环的最佳电压，并且基于每个等离子体处理的实际检测到的浮动电压的变化来调整最佳施加电压。

公开(公告)号：US08343306B2

公开(公告)日：2013-01-01

申请号：US12046094

申请日：2008-03-11

Applicant: Satoshi Tanaka ,  Chishio Koshimizu ,  Manabu Iwata ,  Naoki Matsumoto ,  Toru Ito

Inventor： Satoshi Tanaka ,  Chishio Koshimizu ,  Manabu Iwata ,  Naoki Matsumoto ,  Toru Ito

IPC: H01L21/00 ,  C23C16/00

CPC classification number: H01J37/32706 ,  H01J37/32091

Abstract: A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.

Abstract translation: 等离子体处理装置可以防止护套变形，简化装置的构造，并防止颗粒附着于基板。 等离子体处理装置对基板进行等离子体处理。 容纳室容纳衬底。 安装台设置在壳体室内并与基板一起安装。 环形构件设置在安装台中。 电源单元为安装级提供高频电源。 观察单元光学地观察等离子体的分布。 电压施加单元向环形构件施加DC电压。 控制单元基于观察到的等离子体分布来设定要施加的DC电压的值。

公开(公告)号：US20120227955A1

公开(公告)日：2012-09-13

申请号：US13415354

申请日：2012-03-08

Applicant: Chishio KOSHIMIZU

Inventor： Chishio KOSHIMIZU

IPC: G05D16/00 ,  H01L21/306

CPC classification number: G05D23/1919 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67253

Abstract: Provided are a substrate temperature control method and a plasma processing apparatus using the method. The method includes: disposing a substrate on a placing table provided in a vacuum processing chamber; supplying a heat conduction gas between a rear surface of the substrate and the placing table; detecting a pressure of the heat conduction gas; comparing the detected pressure value with a set pressure value; controlling the supply of the heat conduction gas so that the detected pressure value becomes the set pressure value; and alternately repeating a first period where the set pressure value is set to be a first set pressure value that is higher than a low pressure value and equal to or higher than the lowest limit pressure value and a second period where the set pressure value is set to be a second set pressure value that is lower than the low pressure value.

Abstract translation: 提供了一种基板温度控制方法和使用该方法的等离子体处理装置。 该方法包括：将基板设置在设置在真空处理室中的放置台上; 在所述基板的后表面和所述放置台之间提供导热气体; 检测导热气体的压力; 将检测到的压力值与设定压力值进行比较; 控制导热气体的供给，使检测的压力值成为设定压力值; 并且交替地重复设定压力值被设定为高于低压值且等于或高于最低限压值的第一设定压力值的第一时段和设定压力值设定的第二时段 成为低于低压值的第二设定压力值。

公开(公告)号：US20120084045A1

公开(公告)日：2012-04-05

申请号：US13248538

申请日：2011-09-29

Applicant: Chishio KOSHIMIZU ,  Jun YAMAWAKU ,  Tatsuo MATSUDO

Inventor： Chishio KOSHIMIZU ,  Jun YAMAWAKU ,  Tatsuo MATSUDO

IPC: G01K11/00

CPC classification number: G01K11/125 ,  G01B9/02021 ,  G01B9/02025 ,  G01B9/0209 ,  G01B11/0675

Abstract: Provided is a temperature measuring method which can accurately measure a temperature of an object to be measured compared to a conventional method, even if a thin film is formed on the object. The temperature measuring method includes: transmitting a light from a light source to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film based on an intensity of the second interference wave; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length, based on the calculated film thickness of the thin film; compensating for the optical path length from the first interference wave to the second interference wave based on the calculated optical path difference; and calculating a temperature of the object at the measurement point based on the compensated optical path length.

Abstract translation: 提供一种温度测量方法，即使在物体上形成薄膜，也可以与以往的方法相比，能够精确地测定被测量物体的温度。 温度测量方法包括：将来自光源的光传输到被测量物体的测量点，所述物体是其上形成有薄膜的基板; 测量由来自基板的表面的反射光引起的第一干涉波，以及由来自基板和薄膜之间的界面和薄膜的后表面的反射光引起的第二干涉波; 计算从第一干涉波到第二干涉波的光路长度; 基于第二干涉波的强度计算薄膜的膜厚; 基于计算出的薄膜的膜厚度，计算基板的光路长度与算出的光程长度之间的光程差; 基于计算的光程差补偿从第一干涉波到第二干涉波的光路长度; 以及基于补偿的光程长度计算测量点处的物体的温度。

公开(公告)号：US08137471B2

公开(公告)日：2012-03-20

申请号：US12696323

申请日：2010-01-29

Applicant: Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

Inventor： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC: C23C16/00

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract translation: 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。