发明申请
- 专利标题： STRUCTURE OF HIGH-FREQUENCY COMPONENTS WITH LOW STRAY CAPACITANCES
- 专利标题（中）： 具有低电流电容的高频部件的结构
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申请号： US12059600申请日： 2008-03-31
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公开(公告)号： US20080237785A1公开(公告)日： 2008-10-02
- 发明人: Jean-Michel Simonnet , Andre Lhorte , Patrick Poveda
- 申请人： Jean-Michel Simonnet , Andre Lhorte , Patrick Poveda
- 申请人地址： FR Montrouge
- 专利权人： STMicroelectronics S.A.
- 当前专利权人： STMicroelectronics S.A.
- 当前专利权人地址： FR Montrouge
- 优先权： FR07/54221 20070402
- 主分类号： H01L27/02
- IPC分类号： H01L27/02
摘要：
A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.
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