公开(公告)号：US20050006662A1

公开(公告)日：2005-01-13

申请号：US10885996

申请日：2004-07-07

申请人： Jean-Luc Morand ,  Emmanuel Collard ,  Andre Lhorte

发明人： Jean-Luc Morand ,  Emmanuel Collard ,  Andre Lhorte

IPC分类号： H01L27/07 ,  H01L27/08 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H01L29/74

CPC分类号： H01L29/8611 ,  H01L27/0788 ,  H01L27/0814 ,  H01L29/872

摘要： A vertical rectifying and protection power diode, formed in a lightly-doped semiconductor layer of a first conductivity type, resting on a heavily-doped substrate of the first conductivity type, having a first ring-shaped region, of the first conductivity type more heavily-doped than the layer and more lightly doped than the substrate, surrounding an area of the layer and extending to the substrate; and a second ring-shaped region, doped of the second conductivity type, extending at the surface of the first region and on either side thereof; a first electrode having a thin layer of a material capable of forming a Schottky diode with the layer, resting on the area of the layer and on at least a portion of the second ring-shaped region with which it forms an ohmic contact.

摘要翻译： 形成在第一导电类型的轻掺杂半导体层中的垂直整流和保护功率二极管，其位于第一导电类型的重掺杂衬底上，具有第一导电类型的第一环形区域 与该衬底相比掺杂并且比衬底更轻地掺杂，围绕该层的区域并延伸到衬底; 以及在所述第一区域的表面和其任一侧上延伸的第二导电类型的第二环形区域; 第一电极，其具有能够与所述层形成肖特基二极管的材料的薄层，搁置在所述层的区域上以及在形成欧姆接触的第二环形区域的至少一部分上。

公开(公告)号：US20080237785A1

公开(公告)日：2008-10-02

申请号：US12059600

申请日：2008-03-31

申请人： Jean-Michel Simonnet ,  Andre Lhorte ,  Patrick Poveda

发明人： Jean-Michel Simonnet ,  Andre Lhorte ,  Patrick Poveda

IPC分类号： H01L27/02

CPC分类号： H01L29/8611 ,  H01L21/76264 ,  H01L27/0251 ,  H01L27/0814 ,  H01L27/1203 ,  H01L29/06

摘要： A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.

摘要翻译： 包括至少两个能够以高频工作的相邻部件的结构形成在硅衬底上延伸并且由绝缘层分离的薄硅衬底中，所述部件被绝缘区横向隔开。 硅载体至少在与绝缘层接触的部分附近具有大于或等于1,000欧姆·厘米的电阻率。