发明申请
US20080241751A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS
审中-公开
化学放大抗负荷组合物和模式过程
- 专利标题： CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS
- 专利标题（中）： 化学放大抗负荷组合物和模式过程
-
申请号： US12058967申请日： 2008-03-31
-
公开(公告)号： US20080241751A1公开(公告)日： 2008-10-02
- 发明人: Takanobu TAKEDA , Tamotsu WATANABE , Ryuji KOITABASHI , Keiichi MASUNAGA , Akinobu TANAKA , Osamu WATANABE
- 申请人： Takanobu TAKEDA , Tamotsu WATANABE , Ryuji KOITABASHI , Keiichi MASUNAGA , Akinobu TANAKA , Osamu WATANABE
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-087243 20070329
- 主分类号： G03F7/027
- IPC分类号： G03F7/027 ; G03F7/20
摘要：
A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.
信息查询
IPC分类:
