公开(公告)号：US08263308B2

公开(公告)日：2012-09-11

申请号：US12722068

申请日：2010-03-11

申请人： Shohei Tagami ,  Takanobu Takeda ,  Michihiro Sugo ,  Hideto Kato

发明人： Shohei Tagami ,  Takanobu Takeda ,  Michihiro Sugo ,  Hideto Kato

IPC分类号： G03F7/004 ,  G03F7/30 ,  C08G69/26 ,  C08G77/00

CPC分类号： C08G77/455 ,  C08G73/106 ,  C08K5/34922 ,  C08L63/00 ,  C08L79/08 ,  C08L83/10 ,  G03F7/0382 ,  G03F7/0387

摘要： A polyimide silicone having in the molecule a phenolic hydroxy group in which a part or all of hydrogen atoms are substituted with an acid labile group is provided. The polyimide silicone comprises the unit represented by the formula (1): wherein X is a tetravalent group at least a part of which is a tetravalent organic group represented by the formula (2): wherein R1 is a monovalent hydrocarbon group, R2 is a trivalent group, and n is an integer of 1 to 120 on average; and Y is a divalent organic group at least a part of which is a divalent organic group having a phenolic hydroxy group in which a part or all of hydrogen atoms are substituted with an acid labile group represented by the formula (3): wherein R3 and R4 are a hydrogen atom or an alkyl group, and R5 is an alkyl group, an aryl group, or an aralkyl group. R3 and R4, R3 and R5, or R4 and R5 may be bonded to each other to form a ring together with the carbon atom or the carbon atom and the oxygen atom to which they are bonded with the proviso that the R3, R4, and R5 are independently an alkylene group.

摘要翻译： 提供了在分子中具有一部分或全部氢原子被酸不稳定基团取代的酚羟基的聚酰亚胺硅氧烷。 聚酰亚胺硅氧烷包括由式（1）表示的单元：其中X是四价基团，其中至少一部分是由式（2）表示的四价有机基团：其中R 1是一价烃基，R 2是 三价基​​，平均为n为1〜120的整数。 Y为二价有机基团，其中至少一部分为具有酚羟基的二价有机基团，其中部分或全部氢原子被式（3）表示的酸不稳定基团取代：其中R3和 R4是氢原子或烷基，R5是烷基，芳基或芳烷基。 R 3和R 4，R 3和R 5或R 4和R 5可以彼此键合以与碳原子或碳原子和它们所键合的氧原子一起形成环，条件是R3，R4和 R5独立地是亚烷基。

公开(公告)号：US07977027B2

公开(公告)日：2011-07-12

申请号：US11876298

申请日：2007-10-22

申请人： Takanobu Takeda ,  Osamu Watanabe ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Ryuji Koitabashi ,  Tamotsu Watanabe

发明人： Takanobu Takeda ,  Osamu Watanabe ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Ryuji Koitabashi ,  Tamotsu Watanabe

IPC分类号： G03F7/039 ,  G03F7/26

CPC分类号： G03F7/0045 ,  G03F7/0392

摘要： A chemically amplified positive resist composition comprises a compound having an amine oxide structure as a basic component, a base resin, a photoacid generator, and an organic solvent. The resist composition exhibits a high resolution, significantly prevents a line pattern from collapsing after development, and has improved etch resistance.

摘要翻译： 化学放大正型抗蚀剂组合物包含具有胺氧化物结构作为碱性组分的化合物，基础树脂，光酸产生剂和有机溶剂。 抗蚀剂组合物显示高分辨率，显着地防止显影后线图案塌陷，并且具有改善的耐蚀刻性。

公开(公告)号：US20110076465A1

公开(公告)日：2011-03-31

申请号：US12889730

申请日：2010-09-24

申请人： Takanobu Takeda ,  Hideto Kato

发明人： Takanobu Takeda ,  Hideto Kato

IPC分类号： C08G77/14 ,  G03F7/004 ,  G03F7/20 ,  B32B3/10

CPC分类号： C08L83/06 ,  C08G77/14 ,  C08G77/80 ,  C08L83/14 ,  C09D183/06 ,  C09D183/14 ,  G03F7/0045 ,  G03F7/0757 ,  H01L21/02118 ,  H01L21/312 ,  Y10T428/24802 ,  C08L2666/14

摘要： A photo-curable resin composition comprising an epoxy-containing silphenylene or silicone polymer with a Mw of 3,000-500,000 forms a coating which is useful as a protective film for electric/electronic parts.

摘要翻译： 包含Mw为3,000〜500,000的含环氧基的硅亚烷基或有机硅聚合物的光固化树脂组合物形成可用作电气/电子部件的保护膜的涂层。

公开(公告)号：US07887991B2

公开(公告)日：2011-02-15

申请号：US12320265

申请日：2009-01-22

申请人： Jun Hatakeyama ,  Takanobu Takeda

发明人： Jun Hatakeyama ,  Takanobu Takeda

IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115

摘要： The present invention provides a polymer, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance, suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition; a positive resist composition using the polymer; and a patterning process.The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).

摘要翻译： 本发明提供一种聚合物，其具有高灵敏度，高分辨率，曝光后良好的图案构造，另外具有优异的抗蚀刻性，适合作为正性抗蚀剂组合物的基础树脂，特别是用于化学放大阳性 抗蚀剂组成; 使用该聚合物的正性抗蚀剂组合物; 和图案化过程。 本发明的正型抗蚀剂组合物的特征在于，至少含有作为基础树脂的氢氧化铝基团的氢原子被下述通式（1）表示的酸不稳定基团取代的聚合物。

公开(公告)号：US07655378B2

公开(公告)日：2010-02-02

申请号：US11808706

申请日：2007-06-12

申请人： Jun Hatakeyama ,  Takanobu Takeda

发明人： Jun Hatakeyama ,  Takanobu Takeda

IPC分类号： G03F7/038 ,  G03F7/004 ,  G03F7/20 ,  G03F7/30

CPC分类号： G03F7/0382 ,  C08F220/26 ,  C08F220/28 ,  C08F220/38 ,  Y10S430/106 ,  Y10S430/108

摘要： There is disclosed a negative resist composition comprising, at least, a polymer comprising a repeating unit of hydroxy vinylnaphthalene represented by the following general formula (1). There can be provided a negative resist composition, in particular, a chemically amplified negative resist composition that can exhibit higher resolution than conventional hydroxy styrene or novolac negative resist compositions, that provides excellent pattern profiles after being exposed and that exhibits excellent etching resistance; and a patterning process that uses the resist composition.

摘要翻译： 公开了一种负性抗蚀剂组合物，其包含至少包含由以下通式（1）表示的羟基乙烯基萘的重复单元的聚合物。 可以提供负的抗蚀剂组合物，特别是化学放大的负性抗蚀剂组合物，其可以表现出比常规羟基苯乙烯或酚醛清漆阴性抗蚀剂组合物更高的分辨率，其在曝光后提供优异的图案轮廓并且表现出优异的耐蚀刻性; 以及使用抗蚀剂组合物的图案化工艺。

公开(公告)号：US20100009286A1

公开(公告)日：2010-01-14

申请号：US12457327

申请日：2009-06-08

申请人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

发明人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/114

摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.

摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。

公开(公告)号：US20090202947A1

公开(公告)日：2009-08-13

申请号：US12320266

申请日：2009-01-22

申请人： Jun Hatakeyama ,  Takanobu Takeda

发明人： Jun Hatakeyama ,  Takanobu Takeda

IPC分类号： G03F7/004 ,  C08G65/38 ,  G03F7/20 ,  C08G8/02

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115

摘要： The present invention provides a polymer suitable as a base resin for a positive resist composition, especially for a chemically amplified positive resist composition, having a high sensitivity, a high degree of resolution, a good pattern configuration after exposure, and in addition an excellent etching resistance; a positive resist composition using the polymer; and a patterning process.The positive resist composition of the present invention is characterized in that it contains at least, as a base resin, a polymer whose hydrogen atom of a phenolic hydroxide group is substituted by an acid labile group represented by the following general formula (1).

摘要翻译： 本发明提供了适合作为正型抗蚀剂组合物的基础树脂的聚合物，特别是用于具有高灵敏度，高分辨率，曝光后的良好图案构造的化学增幅正性抗蚀剂组合物的基础树脂，另外还具有优异的蚀刻 抵抗性; 使用该聚合物的正性抗蚀剂组合物; 和图案化过程。 本发明的正型抗蚀剂组合物的特征在于，至少含有作为基础树脂的氢氧化铝基团的氢原子被下述通式（1）表示的酸不稳定基团取代的聚合物。

公开(公告)号：US20090030177A1

公开(公告)日：2009-01-29

申请号：US12177403

申请日：2008-07-22

申请人： Takanobu TAKEDA ,  Tamotsu WATANABE

发明人： Takanobu TAKEDA ,  Tamotsu WATANABE

IPC分类号： C08F6/04

CPC分类号： C08F6/04

摘要： A polymer for use in photoresist compositions is synthesized by effecting polymerization reaction to form a polymerization product mixture and subjecting the mixture to molecular weight fractionation by a liquid phase separation technique using a good solvent and a poor solvent. The fractionation step is iterated at least twice, and one iteration of fractionation includes adding a good solvent which is different from the good solvent added in the other iteration of fractionation.

摘要翻译： 通过进行聚合反应以形成聚合产物混合物并通过液相分离技术使用良溶剂和不良溶剂对混合物进行分子量分级，合成用于光致抗蚀剂组合物的聚合物。 分馏步骤重复至少两次，一次分馏反应包括加入不同于另一次分馏反应中加入的良溶剂的良溶剂。

公开(公告)号：US07476486B2

公开(公告)日：2009-01-13

申请号：US11354128

申请日：2006-02-15

申请人： Jun Hatakeyama ,  Takanobu Takeda

发明人： Jun Hatakeyama ,  Takanobu Takeda

IPC分类号： G03C1/73 ,  G03F7/038 ,  G03F7/039

CPC分类号： G03F7/0392 ,  B82Y30/00 ,  G03F7/0382

摘要： A resist composition comprising a fullerene having five phenol derivatives is provided.

摘要翻译： 提供了包含具有五个苯酚衍生物的富勒烯的抗蚀剂组合物。

公开(公告)号：US07449277B2

公开(公告)日：2008-11-11

申请号：US11523792

申请日：2006-09-20

申请人： Jun Hatakeyama ,  Takeshi Nagata ,  Takanobu Takeda

发明人： Jun Hatakeyama ,  Takeshi Nagata ,  Takanobu Takeda

IPC分类号： G03F7/039 ,  G03F7/30 ,  G03C1/00

CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/28 ,  C08F220/30 ,  G03F7/0046 ,  Y10S430/108

摘要： A polymer is obtained from (meth)acrylate having a bridged ring lactone group, (meth)acrylate having an acid-labile leaving group, and (meth)acrylate having a hydroxynaphthyl pendant. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development, and leaves minimal residues following development.

摘要翻译： 聚合物得自具有桥环内酯基的（甲基）丙烯酸酯，具有酸不稳定离去基的（甲基）丙烯酸酯和具有羟基萘基侧基的（甲基）丙烯酸酯。 包含作为基础树脂的聚合物的正性抗蚀剂组合物当暴露于高能量辐射并显影时表现出高灵敏度，高分辨率和由于显影期间的受控膨胀引起的最小线边缘粗糙度，并且在显影后留下最少残留物 。