Invention Application
- Patent Title: High Capacity Low Cost Multi-State Magnetic Memory
- Patent Title (中): 大容量低成本多态磁存储器
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Application No.: US11866830Application Date: 2007-10-03
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Publication No.: US20080246104A1Publication Date: 2008-10-09
- Inventor: Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
- Applicant: Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
- Applicant Address: US CA Fremont
- Assignee: YADAV TECHNOLOGY
- Current Assignee: YADAV TECHNOLOGY
- Current Assignee Address: US CA Fremont
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
One embodiment of the present invention includes multi-state current-switching magnetic memory element including a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer, the stack for storing more than one bit of information, wherein different levels of current applied to the memory element causes switching to different states.
Information query
IPC分类:
