公开(公告)号：US20090218645A1

公开(公告)日：2009-09-03

申请号：US12397255

申请日：2009-03-03

申请人： Rajiv Yadav RANJAN ,  Parviz KESHTBOD

发明人： Rajiv Yadav RANJAN ,  Parviz KESHTBOD

IPC分类号： H01L29/82

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/5607 ,  G11C2211/5615 ,  H01L27/228 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

摘要： A multi-state spin-torque transfer magnetic random access memory (STTMRAM) is formed on a film and includes a first magnetic tunneling junctions (MTJ) having a first fixed layer, a first sub-magnetic tunnel junction (sub-MTJ) layer and a first free layer. The first fixed layer and first free layer each have a first magnetic anisotropy. The STTMRAM further includes a non-magnetic spacing layer formed on top of the first MTJ layer and a second MTJ formed on top of the non-magnetic spacing layer. The second MTJ has a second fixed layer, a second sub-MTJ layer and a second free layer. The second fixed and second free layers each have a second magnetic anisotropy, wherein at least one of the first or second magnetic anisotropy is perpendicular to the plane of the film.

摘要翻译： 在薄膜上形成多态自旋转矩传递磁随机存取存储器（STTMRAM），其包括具有第一固定层，第一子磁性隧道结（sub-MTJ）层和第一子磁隧道结（sub-MTJ）层的第一磁隧道结（MTJ） 第一个自由层。 第一固定层和第一自由层各自具有第一磁各向异性。 STTMRAM还包括形成在第一MTJ层的顶部上的非磁性间隔层和形成在非磁性间隔层的顶部上的第二MTJ。 第二MTJ具有第二固定层，第二子MTJ层和第二自由层。 第二固定和第二自由层各自具有第二磁各向异性，其中第一或第二磁各向异性中的至少一个垂直于膜的平面。

公开(公告)号：US20080180991A1

公开(公告)日：2008-07-31

申请号：US11932940

申请日：2007-10-31

申请人： Jianping Wang

发明人： Jianping Wang

IPC分类号： G11C11/14

CPC分类号： G11C11/15 ,  G11C11/5607 ,  H01L43/08

摘要： One embodiment of the present invention includes a memory element having a composite free layer including a first free sub-layer formed on top of the bottom electrode, a nano-current-channel (NCC) layer formed on top of the first free sub-layer, and a second free sub-layer formed on top of the NCC layer, wherein when switching current is applied to the memory element, in a direction that is substantially perpendicular to the layers of the memory element, local magnetic moments of the NCC layer switch the state of the memory element.

摘要翻译： 本发明的一个实施例包括具有复合自由层的存储元件，所述复合自由层包括形成在所述底部电极顶部上的第一自由子层，形成在所述第一自由子层的顶部上的纳米电流通道（NCC） 以及形成在NCC层的顶部上的第二自由子层，其中当在基本上垂直于存储元件的层的方向上向存储元件施加开关电流时，NCC层开关的局部磁矩 存储元件的状态。

公开(公告)号：US20090109739A1

公开(公告)日：2009-04-30

申请号：US12255624

申请日：2008-10-21

申请人： Rajiv Yadav RANJAN ,  Roger Klaus Malmhall ,  Parviz Keshtbod

发明人： Rajiv Yadav RANJAN ,  Roger Klaus Malmhall ,  Parviz Keshtbod

IPC分类号： G11C11/02

CPC分类号： H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C19/0808 ,  H01L43/08

摘要： A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.

摘要翻译： 公开了一种包括自由层，两个堆叠和磁性隧道结的多状态低电流切换磁存储元件（磁存储元件）。 堆叠和磁性隧道结设置在自由层的表面上，磁性隧道结位于堆叠之间。 堆叠在自由层内引导磁畴，产生自由层畴壁。 从堆栈传递到堆栈的电流推动域壁，重新定位自由层内的域壁。 畴壁相对于磁性隧道结的位置对应于唯一的电阻值，并且将电流从堆叠传递到磁性隧道结读取磁存储元件的电阻。 因此，可以通过移动域壁来实现唯一的记忆状态。

公开(公告)号：US20080293165A1

公开(公告)日：2008-11-27

申请号：US12040827

申请日：2008-02-29

申请人： Rajiv Yadav RANJAN ,  Parviz KESHTBOD ,  Roger Klas MALMHALL

发明人： Rajiv Yadav RANJAN ,  Parviz KESHTBOD ,  Roger Klas MALMHALL

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01L27/228

摘要： In accordance with a method of the present invention, a method of manufacturing a magnetic random access memory (MRAM) cell and a corresponding structure thereof are disclosed to include a multi-stage manufacturing process. The multi-stage manufacturing process includes performing a front end on-line (FEOL) stage to manufacture logic and non-magnetic portions of the memory cell by forming an intermediate interlayer dielectric (ILD) layer, forming intermediate metal pillars embedded in the intermediate ILD layer, depositing a conductive metal cap on top of the intermediate ILD layer and the metal pillars, performing magnetic fabrication stage to make a magnetic material portion of the memory cell being manufactured, and performing back end on-line (BEOL) stage to make metal and contacts of the memory cell being manufactured.

摘要翻译： 根据本发明的方法，公开了一种制造磁随机存取存储器（MRAM）单元及其相应结构的方法，以包括多级制造工艺。 多级制造过程包括通过形成中间层间电介质（ILD）层来形成前端在线（FEOL）级来制造存储单元的逻辑和非磁性部分，形成嵌入在中间ILD中的中间金属柱 层，在中间ILD层和金属柱的顶部上沉积导电金属帽，进行磁性制造阶段以制造存储单元的磁性材料部分，并执行后端在线（BEOL）阶段以制造金属 和正在制造的存储单元的触点。

公开(公告)号：US20080191251A1

公开(公告)日：2008-08-14

申请号：US11739648

申请日：2007-04-24

申请人： Rajiv Yadav Ranjan ,  Parviz Keshtbod

发明人： Rajiv Yadav Ranjan ,  Parviz Keshtbod

IPC分类号： G11C11/22 ,  H01L43/12

CPC分类号： H01L43/10 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

摘要： One embodiment of the present invention includes a an embodiment of the present invention includes a non-volatile current-switching magnetic memory element including a bottom electrode; a pinning layer formed on top of the bottom electrode; a fixed layer formed on top of the pinning layer; a tunnel layer formed on top of the pinning layer; a first free layer formed on top of the tunnel layer; a granular film layer formed on top of the free layer; a second free layer formed on top of the granular film layer; a cap layer formed on top of the second layer; and a top electrode formed on top of the cap layer.

摘要翻译： 本发明的一个实施例包括本发明的一个实施例，其包括一个包括底部电极的非易失性电流切换磁存储元件; 形成在底部电极顶部的钉扎层; 形成在钉扎层顶部的固定层; 形成在钉扎层之上的隧道层; 形成在隧道层顶部的第一自由层; 形成在自由层顶部的粒状膜层; 形成在所述粒状膜层顶部的第二自由层; 盖层，形成在第二层的顶部; 以及形成在盖层顶部上的顶部电极。

公开(公告)号：US20080225585A1

公开(公告)日：2008-09-18

申请号：US11860467

申请日：2007-09-24

申请人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

发明人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

IPC分类号： G11C11/15

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607

摘要： An embodiment of the present invention includes a multi-state current-switching magnetic memory element having a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.

摘要翻译： 本发明的实施例包括具有磁隧道结（MTJ）的多状态电流切换磁存储元件，用于存储多于一位的信息。 MTJ包括固定层，阻挡层和不均匀的自由层。 在一个实施例中，当每个单元具有2位时，当四个不同电平的电流之一被施加到存储元件时，所施加的电流使MTJ的非均匀自由层切换到四个不同的磁状态之一。 MTJ的宽开关电流分布是非均匀自由层的宽晶粒尺寸分布的结果。

公开(公告)号：US20090154229A1

公开(公告)日：2009-06-18

申请号：US12125866

申请日：2008-05-22

申请人： Parviz KESHTBOD

发明人： Parviz KESHTBOD

IPC分类号： G11C11/14 ,  G11C7/00 ,  G11C11/416

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1693

摘要： A sensing circuit includes a sense amplifier circuit having a first and second nodes through which a magnetic memory element is sensed. A first current source is coupled to the first node a second current source is coupled to the second node. A reference magnetic memory element has a resistance associated therewith and is coupled to the first node, the reference magnetic memory element receives current from the first current source. At least one memory element, having a resistance associated therewith, is coupled to the second node and receives current from the second current source. Current from the first current source and current from the second current source are substantially the same. The logic state of the at least one memory element is sensed by a comparison of the resistance of the at least one memory element to the resistance of the reference magnetic memory element.

摘要翻译： 感测电路包括具有第一和第二节点的读出放大器电路，通过该第一和第二节点检测磁存储元件。 第一电流源耦合到第一节点，第二电流源耦合到第二节点。 参考磁存储元件具有与之相关联的电阻并且耦合到第一节点，参考磁存储元件从第一电流源接收电流。 具有与其相关联的电阻的至少一个存储元件耦合到第二节点并从第二电流源接收电流。 来自第一电流源的电流和来自第二电流源的电流基本上相同。 通过比较至少一个存储元件的电阻与参考磁存储元件的电阻来感测至少一个存储元件的逻辑状态。

公开(公告)号：US20090046501A1

公开(公告)日：2009-02-19

申请号：US12182996

申请日：2008-07-30

申请人： Rajiv Yadav RANJAN ,  Parviz KESHTBOD ,  Mahmud ASSAR

发明人： Rajiv Yadav RANJAN ,  Parviz KESHTBOD ,  Mahmud ASSAR

IPC分类号： G11C11/14 ,  H01L21/00 ,  G11C11/34

CPC分类号： G06F12/0246 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C14/00 ,  H01L27/105 ,  H01L27/224

摘要： A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die.

摘要翻译： 闪存RAM存储器包括形成在单片模块上的非易失性随机存取存储器（RAM）和形成在非易失性RAM，非易失性页面模式存储器和非易失性页面模式存储器之上的非易失性页面模式存储器， 易失性RAM驻留在单片模具上。

公开(公告)号：US20070253245A1

公开(公告)日：2007-11-01

申请号：US11740861

申请日：2007-04-26

申请人： Rajiv Yadav Ranjan ,  Parviz Keshtbod

发明人： Rajiv Yadav Ranjan ,  Parviz Keshtbod

IPC分类号： G11C11/14

CPC分类号： H01L27/224 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10S977/933 ,  Y10S977/935

摘要： One embodiment of the present invention includes a diode-addressable current-induced magnetization switching (CIMS) memory element including a magnetic tunnel junction (MTJ) and a diode formed on top of the MTJ for addressing the MTJ.

摘要翻译： 本发明的一个实施例包括二极管可寻址电流感应磁化切换（CIMS）存储元件，其包括磁隧道结（MTJ）和形成在MTJ顶部的用于寻址MTJ的二极管。

公开(公告)号：US20100259976A1

公开(公告)日：2010-10-14

申请号：US12756081

申请日：2010-04-07

申请人： Ebrahim ABEDIFARD

发明人： Ebrahim ABEDIFARD

IPC分类号： G11C11/14 ,  G11C11/416

CPC分类号： G11C8/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C2213/75

摘要： A spin-torque transfer memory random access memory (STTMRAM) cell is disclosed comprising a selected magnetic tunnel junction (MTJ) identified to be programmed; a first transistor having a first port, a second port and a gate, the first port of the first transistor coupled to the selected MTJ; a first neighboring MTJ coupled to the selected MTJ through the second port of the first transistor; a second transistor having a first port, a second port, and a gate, the first port of the second transistor coupled to the selected MTJ; a second neighboring MTJ coupled to the selected MTJ through the second port of the second transistor; a first bit/source line coupled to the second end of the selected MTJ; and a second bit/source line coupled to the second end of the first neighboring MTJ and the second end of the second neighboring MTJ.

摘要翻译： 公开了一种自旋转矩传递存储器随机存取存储器（STTMRAM）单元，其包括被识别为被编程的所选择的磁性隧道结（MTJ）; 具有第一端口，第二端口和栅极的第一晶体管，耦合到所选择的MTJ的第一晶体管的第一端口; 通过第一晶体管的第二端口耦合到所选择的MTJ的第一相邻MTJ; 具有第一端口，第二端口和栅极的第二晶体管，耦合到所选择的MTJ的第二晶体管的第一端口; 通过第二晶体管的第二端口耦合到所选择的MTJ的第二相邻MTJ; 耦合到所选MTJ的第二端的第一位/源极线; 以及耦合到第一相邻MTJ的第二端和第二相邻MTJ的第二端的第二位/源极线。