- 专利标题: INTERCONNECT STRUCTURE AND METHOD OF FABRICATION OF SAME
-
申请号: US12140352申请日: 2008-06-17
-
公开(公告)号: US20080246151A1公开(公告)日: 2008-10-09
- 发明人: Chih-Chao Yang , Lawrence A. Clevenger , Andrew P. Cowley , Timothy J. Dalton , Meeyoung H. Yoon
- 申请人: Chih-Chao Yang , Lawrence A. Clevenger , Andrew P. Cowley , Timothy J. Dalton , Meeyoung H. Yoon
- 主分类号: H01L23/52
- IPC分类号: H01L23/52
摘要:
A damascene wire and method of forming the wire. The method including: forming a mask layer on a top surface of a dielectric layer; forming an opening in the mask layer; forming a trench in the dielectric layer where the dielectric layer is not protected by the mask layer; recessing the sidewalls of the trench under the mask layer; forming a conformal conductive liner on all exposed surface of the trench and the mask layer; filling the trench with a core electrical conductor; removing portions of the conductive liner extending above the top surface of the dielectric layer and removing the mask layer; and forming a conductive cap on a top surface of the core conductor. The structure includes a core conductor clad in a conductive liner and a conductive capping layer in contact with the top surface of the core conductor that is not covered by the conductive liner.
公开/授权文献
- US07598616B2 Interconnect structure 公开/授权日:2009-10-06