发明申请
- 专利标题: Method For Producing High Purity Silicon
- 专利标题(中): 高纯硅生产方法
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申请号: US11885749申请日: 2006-02-28
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公开(公告)号: US20080247936A1公开(公告)日: 2008-10-09
- 发明人: Nobuaki Ito , Jiro Kondo , Kensuke Okazawa , Masaki Okajima
- 申请人: Nobuaki Ito , Jiro Kondo , Kensuke Okazawa , Masaki Okajima
- 申请人地址: JP TOKYO
- 专利权人: NIPPON STEEL MATERIALS CO., LTD.
- 当前专利权人: NIPPON STEEL MATERIALS CO., LTD.
- 当前专利权人地址: JP TOKYO
- 优先权: JP2005-062556 20050307; JP2006-034342 20060210
- 国际申请: PCT/JP2006/304199 WO 20060228
- 主分类号: C01B33/02
- IPC分类号: C01B33/02
摘要:
An object of the present invention is to provide a method for producing a great deal of inexpensive high purity silicon useful in a solar battery. Disclosed is a method for producing the high purity silicon by migrating impurities in molten silicon to slag including the step of feeding an oxidizing agent to the molten silicon together with slag, wherein the oxidizing agent is a material comprising as a primary component at least one of the following materials: alkali metal carbonate, hydrate of alkali metal carbonate, alkali metal hydroxide, alkaline-earth metal carbonate, hydrate of alkaline-earth metal carbonate or alkaline-earth metal hydroxide.
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