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公开(公告)号：US20080311020A1
公开(公告)日：2008-12-18
申请号：US11885798
申请日：2006-02-28
申请人： Nobuaki Ito , Jiro Kondo , Kensuke Okazawa , Masaki Okajima
发明人： Nobuaki Ito , Jiro Kondo , Kensuke Okazawa , Masaki Okajima
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： An object of the invention is to provide a method for producing a large amount of inexpensive and high purity silicon useful in a solar battery. The method includes steps of preparing molten silicon, preparing a slag, bringing the molten silicon and the slag into contact with each other, and exposing at least the slag to vacuum pressure.
摘要翻译： 本发明的目的是提供一种生产用于太阳能电池的大量廉价和高纯度硅的方法。 该方法包括以下步骤：制备熔融硅，制备炉渣，使熔融硅和炉渣彼此接触，并至少将炉渣暴露于真空压力。
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公开(公告)号：US20080247936A1
公开(公告)日：2008-10-09
申请号：US11885749
申请日：2006-02-28
申请人： Nobuaki Ito , Jiro Kondo , Kensuke Okazawa , Masaki Okajima
发明人： Nobuaki Ito , Jiro Kondo , Kensuke Okazawa , Masaki Okajima
IPC分类号： C01B33/02
CPC分类号： C01B33/037
摘要： An object of the present invention is to provide a method for producing a great deal of inexpensive high purity silicon useful in a solar battery. Disclosed is a method for producing the high purity silicon by migrating impurities in molten silicon to slag including the step of feeding an oxidizing agent to the molten silicon together with slag, wherein the oxidizing agent is a material comprising as a primary component at least one of the following materials: alkali metal carbonate, hydrate of alkali metal carbonate, alkali metal hydroxide, alkaline-earth metal carbonate, hydrate of alkaline-earth metal carbonate or alkaline-earth metal hydroxide.
摘要翻译： 本发明的目的是提供一种生产用于太阳能电池的大量便宜的高纯度硅的方法。 公开了一种通过将熔融硅中的杂质迁移到炉渣中来生产高纯度硅的方法，包括将氧化剂与炉渣一起供入熔融硅的步骤，其中氧化剂是包含作为主要组分的材料， 以下材料：碱金属碳酸盐，碱金属碳酸盐的水合物，碱金属氢氧化物，碱土金属碳酸盐，碱土金属碳酸盐的水合物或碱土金属氢氧化物。
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公开(公告)号：US20080274031A1
公开(公告)日：2008-11-06
申请号：US11885801
申请日：2006-02-28
申请人： Nobuaki Ito , Jiro Kondo , Kensuke Okazawa , Masaki Okajima
发明人： Nobuaki Ito , Jiro Kondo , Kensuke Okazawa , Masaki Okajima
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： The invention relates to a method for producing a great deal of inexpensive high purity silicon useful in a solar battery. Disclosed is a method for producing high purity silicon by removing boron from silicon by oxidization including commencing an oxidization reaction between an oxidizing agent and molten silicon, and cooling at least part of the oxidizing agent during the reaction.
摘要翻译： 本发明涉及一种生产用于太阳能电池的大量便宜的高纯度硅的方法。 公开了一种通过氧化从硅中除去硼而产生高纯度硅的方法，包括开始氧化剂和熔融硅之间的氧化反应，以及在反应期间冷却至少部分氧化剂。
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公开(公告)号：US08038973B2
公开(公告)日：2011-10-18
申请号：US12086041
申请日：2006-07-20
申请人： Nobuaki Ito , Kensuke Okazawa , Shinji Tokumaru , Masaki Okajima
发明人： Nobuaki Ito , Kensuke Okazawa , Shinji Tokumaru , Masaki Okajima
IPC分类号： C01B33/023 , B01J19/12
CPC分类号： C01B33/037
摘要： The present invention provides a high purity silicon production system and production method suitable for using inexpensive metallurgical grade metal silicon as a material and using the slag refining method to produce high purity silicon with a purity of 6N or more suitable for solar battery applications, in particular, high purity silicon with a boron content of at least not more than 0.3 mass ppm, inexpensively on an industrial scale, that is, a high purity silicon production system and production method using the slag refining method wherein a direct electromagnetic induction heating means having the function of directly heating the molten silicon in the crucible by electromagnetic induction is arranged outside the outside wall surface of the above crucible and the crucible is formed by an oxidation resistant material at least at a region where the molten silicon contacts the crucible inside wall surface at the time of not powering the direct electromagnetic induction heating means.
摘要翻译： 本发明提供了一种适用于廉价的冶金级金属硅作为材料的高纯度硅生产系统和生产方法，并且使用炉渣精炼方法生产出适合于太阳能电池应用的纯度为6N或更高的高纯度硅，特别是 硼含量至少为0.3质量ppm以下的高纯度硅，以工业规模廉价，即高纯硅生产系统和使用渣精炼方法的生产方法，其中直接电磁感应加热装置具有 通过电磁感应直接加热坩埚中的熔融硅的功能被布置在上述坩埚的外壁表面的外侧，坩埚至少在熔融硅与坩埚内壁表面接触的区域由抗氧化材料形成 没有为直接电磁感应加热装置供电的时间。
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公开(公告)号：US20090155158A1
公开(公告)日：2009-06-18
申请号：US12086041
申请日：2006-07-20
申请人： Nobuaki Ito , Kensuke Okazawa , Shinji Tokumaru , Masaki Okajima
发明人： Nobuaki Ito , Kensuke Okazawa , Shinji Tokumaru , Masaki Okajima
CPC分类号： C01B33/037
摘要： The present invention provides a high purity silicon production system and production method suitable for using inexpensive metallurgical grade metal silicon as a material and using the slag refining method to produce high purity silicon with a purity of 6N or more suitable for solar battery applications, in particular, high purity silicon with a boron content of at least not more than 0.3 mass ppm, inexpensively on an industrial scale, that is, a high purity silicon production system and production method using the slag refining method wherein a direct electromagnetic induction heating means having the function of directly heating the molten silicon in the crucible by electromagnetic induction is arranged outside the outside wall surface of the above crucible and the crucible is formed by an oxidation resistant material at least at a region where the molten silicon contacts the crucible inside wall surface at the time of not powering the direct electromagnetic induction heating means.
摘要翻译： 本发明提供了一种适用于廉价的冶金级金属硅作为材料的高纯度硅生产系统和生产方法，并且使用炉渣精炼方法生产出适合于太阳能电池应用的纯度为6N或更高的高纯度硅，特别是 硼含量至少为0.3质量ppm以下的高纯度硅，以工业规模廉价，即高纯硅生产系统和使用渣精炼方法的生产方法，其中直接电磁感应加热装置具有 通过电磁感应直接加热坩埚中的熔融硅的功能被布置在上述坩埚的外壁表面的外侧，坩埚至少在熔融硅与坩埚内壁表面接触的区域由抗氧化材料形成 没有为直接电磁感应加热装置供电的时间。
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公开(公告)号：US20080145294A1
公开(公告)日：2008-06-19
申请号：US11883280
申请日：2006-02-09
申请人： Shinji Tokumaru , Kensuke Okazawa , Jirou Kondou , Masaki Okajima
发明人： Shinji Tokumaru , Kensuke Okazawa , Jirou Kondou , Masaki Okajima
IPC分类号： C01B33/023
CPC分类号： C01B33/037
摘要： The present invention provides a method of refining low purity Si by a slag, in particular removing B, which suppresses wear of the reaction vessel due to the slag and produces high purity Si used for solar battery materials etc. at a low cost, comprising adding SiO2 and an alkali oxide or alkali carbonate as a slag material into molten Si to form a slag during which adding one or more types of materials among materials the same as the reaction vessel material used or ingredients included in the reaction vessel material into the slag so as to remove the impurities in the molten Si.
摘要翻译： 本发明提供一种通过炉渣精炼低纯度Si的方法，特别是除去B，其抑制了由于炉渣引起的反应容器的磨损，并以低成本产生用于太阳能电池材料等的高纯度Si，包括加入 SiO 2和作为炉渣的碱金属氧化物或碱金属碳酸盐混合成熔融Si以形成炉渣，在炉渣中添加与所使用的反应容器材料相同的材料中的一种或多种材料， 将反应容器的材料倒入炉渣中以除去熔融Si中的杂质。
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公开(公告)号：US07662356B2
公开(公告)日：2010-02-16
申请号：US11883280
申请日：2006-02-09
申请人： Shinji Tokumaru , Kensuke Okazawa , Jirou Kondou , Masaki Okajima
发明人： Shinji Tokumaru , Kensuke Okazawa , Jirou Kondou , Masaki Okajima
CPC分类号： C01B33/037
摘要： The present invention provides a method of refining low purity Si by a slag, in particular removing B, which suppresses wear of the reaction vessel due to the slag and produces high purity Si used for solar battery materials etc. at a low cost, comprising adding SiO2 and an alkali oxide or alkali carbonate as a slag material into molten Si to form a slag during which adding one or more types of materials among materials the same as the reaction vessel material used or ingredients included in the reaction vessel material into the slag so as to remove the impurities in the molten Si.
摘要翻译： 本发明提供一种通过炉渣精炼低纯度Si的方法，特别是除去B，其抑制了由于炉渣引起的反应容器的磨损，并以低成本产生用于太阳能电池材料等的高纯度Si，包括加入 SiO 2和碱金属氧化物或碱金属碳酸盐作为炉渣材料，形成熔融Si以形成炉渣，在炉渣中添加一种或多种类型的材料，与所使用的反应容器材料相同的材料或包含在反应容器材料中的成分进入炉渣 以去除熔融Si中的杂质。
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公开(公告)号：US07455822B2
公开(公告)日：2008-11-25
申请号：US10490584
申请日：2003-07-22
申请人： Jiro Kondo , Masaki Okajima , Shinji Tokumaru , Hitoshi Dohnomae
发明人： Jiro Kondo , Masaki Okajima , Shinji Tokumaru , Hitoshi Dohnomae
IPC分类号： C01B33/02
CPC分类号： C01B33/021
摘要： A process for production of Si, characterized by adding an oxide, hydroxide, carbonate or fluoride of an alkali metal element, or an oxide, hydroxide, carbonate or fluoride of an alkaline earth metal element, or two or more of such compounds, to solid SiO in a total molar amount of from 1/20 to 1000 times with respect to the moles of solid SiO, heating the mixture at between the melting point of Si and 2000° C. to induce a chemical reaction which produces Si and separating and recovering the Si from the reaction by-product, for the purpose of inexpensively and efficiently producing Si from various forms of solid SiO with no industrial value produced from Si production steps and the like.
摘要翻译： 一种制备Si的方法，其特征在于将碱金属元素的氧化物，氢氧化物，碳酸盐或氟化物，或碱土金属元素的氧化物，氢氧化物，碳酸盐或氟化物，或两种或更多种这些化合物加入到固体 SiO的总摩尔量相对于固体SiO的摩尔数为1/20至1000倍，在Si的熔点和2000℃之间加热混合物以引起产生Si的化学反应并分离和回收 来自反应副产物的Si，目的是从Si生产步骤等产生的没有工业价值的各种形式的固体SiO低成本和有效地生产Si。
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公开(公告)号：US5282218A
公开(公告)日：1994-01-25
申请号：US896536
申请日：1992-06-09
CPC分类号： H01S5/32 , H01S5/2231 , H01S5/2232 , H01S5/3201 , H01S5/3202 , H01S5/321 , H01S5/3211 , H01S5/3218 , H01S5/32325
摘要： A semiconductor laser device for radiating a laser beam from a double heterostructure section in which injected carriers having an energy source of the laser beam are confined consists of a compound semiconductor substrate with a prescribed lattice constant for loading the double heterostructure section, a lattice mismatched active layer with a first lattice constant which is 0.5% to 2.0% larger than the lattice constant of the substrate in the double heterostructure section for radiating the laser beam, a lattice mismatched cladding layer with a second lattice constant which is 0.2% to 2.0% smaller than the lattice constant of the substrate for confining the injected carriers in the active layer, and a cladding layer for confining the injected carriers in the active layer by co-operating with the lattice mismatched cladding layer.
摘要翻译： 一种半导体激光器件，用于从双异质结部分发射激光束，其中具有激光束能量源的注入载流子被限制在一起，由具有用于加载双异质结部分的规定晶格常数的化合物半导体衬底，晶格失配的有源 层，其具有比用于照射激光的双异质结部分中的衬底的晶格常数大0.5％至2.0％的第一晶格常数，具有小于0.2％至2.0％的第二晶格常数的晶格失配覆层 比用于将注入的载流子限制在有源层中的基板的晶格常数以及用于通过与晶格失配包层合作来限制注入的载流子在有源层中的包覆层。
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公开(公告)号：US5202895A
公开(公告)日：1993-04-13
申请号：US695088
申请日：1991-05-03
申请人： Koichi Nitta , Masayuki Ishikawa , Yukie Nishikawa , Hideto Sugawara , Minoru Watanabe , Masaki Okajima , Genichi Hatakoshi
发明人： Koichi Nitta , Masayuki Ishikawa , Yukie Nishikawa , Hideto Sugawara , Minoru Watanabe , Masaki Okajima , Genichi Hatakoshi
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/34326 , H01S5/2206 , H01S5/2209 , H01S5/221 , H01S5/3201 , H01S5/321 , H01S5/32325
摘要： A semiconductor laser device comprises a compound semiconductor substrate, a first cladding layer formed on the substrate, an active layer formed on the first cladding layer, made of In.sub.1-y (Ga.sub.1-x Al.sub.x).sub.y P material (0.ltoreq.x
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