发明申请
- 专利标题： NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题（中）： 非易失性存储器件及其制造方法
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申请号： US11771477申请日： 2007-06-29
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公开(公告)号： US20080251836A1公开(公告)日： 2008-10-16
- 发明人: Chang Soo PARK
- 申请人： Chang Soo PARK
- 申请人地址： KR Icheon-si
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si
- 优先权： KR10-2007-0037030 20070416
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/3205
摘要：
A method for fabricating a non-volatile memory device includes forming a charge tunneling layer composed of a hafnium silicate (HfSixOyNz) layer on a semiconductor substrate. A charge trapping layer composed of a hafnium oxide nitride (HfOxNy) layer is formed on the charge tunneling layer. A charge blocking layer composed of a hafnium oxide layer is formed on the charge trapping layer. A gate layer is formed on the charge blocking layer. A non-volatile memory device fabricated by the method is also disclosed.
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