发明申请
US20080258183A1 Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching
有权
通过局部加热一个或多个金属化层并通过选择性蚀刻来制造器件的方法
- 专利标题: Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching
- 专利标题(中): 通过局部加热一个或多个金属化层并通过选择性蚀刻来制造器件的方法
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申请号: US11789045申请日: 2007-04-23
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公开(公告)号: US20080258183A1公开(公告)日: 2008-10-23
- 发明人: Roland Rupp , Stefan Woehlert , Thomas Gutt , Michael Treu
- 申请人: Roland Rupp , Stefan Woehlert , Thomas Gutt , Michael Treu
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 主分类号: H01L29/80
- IPC分类号: H01L29/80 ; H01L27/095
摘要:
A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.
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