发明申请
- 专利标题： Power Device
- 专利标题（中）： 电源设备
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申请号： US11570269申请日： 2005-06-10
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公开(公告)号： US20080265260A1公开(公告)日： 2008-10-30
- 发明人: Makoto Kitabatake , Osamu Kusumoto , Masao Uchida , Kunimasa Takahashi , Kenya Yamashita , Koichi Hashimoto
- 申请人： Makoto Kitabatake , Osamu Kusumoto , Masao Uchida , Kunimasa Takahashi , Kenya Yamashita , Koichi Hashimoto
- 优先权： JP2004-174037 20040611
- 国际申请： PCT/JP2005/010691 WO 20050610
- 主分类号： H01L29/24
- IPC分类号： H01L29/24
摘要：
A power device having a transistor structure is formed by using a wide band gap semiconductor. A current path 20 of the power device includes: a JFET (junction) region 2, a drift region 3, and a substrate 4, which have ON resistances exhibiting a positive temperature dependence; and a channel region 1, which has an ON resistance exhibiting a negative temperature dependence. A temperature-induced change in the ON resistance of the entire power device is derived by allowing a temperature-induced change ΔRp in the ON resistance in the JFET (junction) region 2, the drift region 3, and the substrate 4, which have ON resistances exhibiting a positive temperature dependence, and a temperature-induced change ΔRn in the ON resistance in the channel region 1, which has an ON resistance exhibiting a negative temperature dependence, to cancel out each other. With respect to an ON resistance of the entire power device at −30° C., a ratio of change in the ON resistance of the entire power device when a temperature of the power device is varied from −30° C. to 100° C. is 50% or less.
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