发明申请
US20080265320A1 COMPONENT ARRANGEMENT INCLUDING A POWER SEMICONDUCTOR COMPONENT HAVING A DRIFT CONTROL ZONE
失效
组件配置，包括带有DRIFT控制区的功率半导体元件
- 专利标题： COMPONENT ARRANGEMENT INCLUDING A POWER SEMICONDUCTOR COMPONENT HAVING A DRIFT CONTROL ZONE
- 专利标题（中）： 组件配置，包括带有DRIFT控制区的功率半导体元件
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申请号： US12019271申请日： 2008-01-24
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公开(公告)号： US20080265320A1公开(公告)日： 2008-10-30
- 发明人: Anton Mauder , Stefan Sedlmaier , Franz Hirler , Armin Willmeroth , Gerhard Noebauer
- 申请人： Anton Mauder , Stefan Sedlmaier , Franz Hirler , Armin Willmeroth , Gerhard Noebauer
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 优先权： DE102007004091.3 20070127
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.
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