发明申请
- 专利标题： METHODS OF BASE FORMATION IN A BiCMOS PROCESS
- 专利标题（中）： BiCMOS工艺中基质形成的方法
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申请号： US12128077申请日： 2008-05-28
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公开(公告)号： US20080268604A1公开(公告)日： 2008-10-30
- 发明人: Peter J. Geiss , Marwan H. Khater , Qizhi Liu , Randy W. Mann , Robert J. Purtell , BethAnn Rainey , Jae-Sung Rieh , Andreas D. Stricker
- 申请人： Peter J. Geiss , Marwan H. Khater , Qizhi Liu , Randy W. Mann , Robert J. Purtell , BethAnn Rainey , Jae-Sung Rieh , Andreas D. Stricker
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/331
- IPC分类号： H01L21/331
摘要：
Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.
公开/授权文献
- US07696034B2 Methods of base formation in a BiCOMS process 公开/授权日：2010-04-13