发明申请
- 专利标题: PLASMA TREATMENT METHOD AND PLASMA TREATMENT APPARATUS
- 专利标题(中): 等离子体处理方法和等离子体处理装置
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申请号: US12055431申请日: 2008-03-26
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公开(公告)号: US20080271676A1公开(公告)日: 2008-11-06
- 发明人: Toshiyasu Shirasuna , Tatsuyuki Aoike , Kazuyoshi Akiyama , Hitoshi Murayama , Takashi Otsuka , Daisuke Tazawa , Kazuto Hosoi , Yukihiro Abe
- 申请人: Toshiyasu Shirasuna , Tatsuyuki Aoike , Kazuyoshi Akiyama , Hitoshi Murayama , Takashi Otsuka , Daisuke Tazawa , Kazuto Hosoi , Yukihiro Abe
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 优先权: JP209817/2000 20000711
- 主分类号: C23C16/00
- IPC分类号: C23C16/00
摘要:
In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.
公开/授权文献
- US07550180B2 Plasma treatment method 公开/授权日:2009-06-23
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