发明申请
- 专利标题: LANTHANOID ALUMINATE FILM FABRICATION METHOD
- 专利标题(中): 兰蔻酸铝薄膜制造方法
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申请号: US11966304申请日: 2007-12-28
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公开(公告)号: US20080271990A1公开(公告)日: 2008-11-06
- 发明人: Tsunehiro Ino , Akira Takashima
- 申请人: Tsunehiro Ino , Akira Takashima
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-115459 20070425
- 主分类号: C23C14/34
- IPC分类号: C23C14/34
摘要:
A method of fabricating by co-sputtering deposition a lanthanoid aluminate film with enhanced electrical insulativity owing to suppression of deviation in composition of the film is disclosed. Firstly within a vacuum chamber, hold two separate targets, one of which is made of lanthanoid aluminate (LnAlO3) and the other of which is made of aluminum oxide (Al2O3). Then, transport and load a substrate into the vacuum chamber. Next, introduce a chosen sputtering gas into this chamber. Thereafter, perform sputtering of both the targets at a time to thereby form a lanthanoid aluminate film on the substrate surface. This film is well adaptable for use as ultra-thin high dielectric constant (high-k) gate dielectrics in highly miniaturized metal oxide semiconductor (MOS) transistors.
公开/授权文献
- US08012315B2 Lanthanoid aluminate film fabrication method 公开/授权日:2011-09-06