发明申请
- 专利标题: THROUGH-WAFER VIAS
- 专利标题(中): 通过六角形
-
申请号: US11690181申请日: 2007-03-23
-
公开(公告)号: US20080274583A1公开(公告)日: 2008-11-06
- 发明人: Paul Stephen Andry , Edmund Juris Sprogis , Kenneth Jay Stein , Timothy Dooling Sullivan , Cornelia Kang-I Tsang , Ping-Chuan Wang , Bucknell C. Webb
- 申请人: Paul Stephen Andry , Edmund Juris Sprogis , Kenneth Jay Stein , Timothy Dooling Sullivan , Cornelia Kang-I Tsang , Ping-Chuan Wang , Bucknell C. Webb
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A through-wafer via structure and method for forming the same. The through-wafer via structure includes a wafer having an opening and a top wafer surface. The top wafer surface defines a first reference direction perpendicular to the top wafer surface. The through-wafer via structure further includes a through-wafer via in the opening. The through-wafer via has a shape of a rectangular plate. A height of the through-wafer via in the first reference direction essentially equals a thickness of the wafer in the first reference direction. A length of the through-wafer via in a second reference direction is at least ten times greater than a width of the through-wafer via in a third reference direction. The first, second, and third reference directions are perpendicular to each other.
公开/授权文献
- US07741722B2 Through-wafer vias 公开/授权日:2010-06-22
信息查询
IPC分类: