发明申请
- 专利标题： ADOPTING FEATURE OF BURIED ELECTRICALLY CONDUCTIVE LAYER IN DIELECTRICS FOR ELECTRICAL ANTI-FUSE APPLICATION
- 专利标题（中）： 采用电抗电阻应用电路的电导电导体层的特征
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申请号： US12144229申请日： 2008-06-23
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公开(公告)号： US20080283964A1公开(公告)日： 2008-11-20
- 发明人: Chih-Chao Yang , Lawrence A. Clevenger , Timothy J. Dalton , Nicholas C. Fuller , Louis C. Hsu
- 申请人： Chih-Chao Yang , Lawrence A. Clevenger , Timothy J. Dalton , Nicholas C. Fuller , Louis C. Hsu
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/525
- IPC分类号： H01L23/525 ; H01L21/44
摘要：
An anti-fuse structure that included a buried electrically conductive, e.g., metallic layer as an anti-fuse material as well as a method of forming such an anti-fuse structure are provided. According to the present invention, the inventive anti-fuse structure comprises regions of leaky dielectric between interconnects. The resistance between these original interconnects starts decreasing when two adjacent interconnects are biased and causes a time-dependent dielectric breakdown, TDDB, phenomenon to occur. Decreasing of the resistance between adjacent interconnects can also be expedited via increasing the local temperature.
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