发明申请
- 专利标题： Stress-Isolated MEMS Device and Method Therefor
- 专利标题（中）： 应力分离MEMS器件及其方法
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申请号： US11753851申请日： 2007-05-25
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公开(公告)号： US20080290430A1公开(公告)日： 2008-11-27
- 发明人: Dave S. Mahadevan , Daniel N. Koury, JR.
- 申请人： Dave S. Mahadevan , Daniel N. Koury, JR.
- 申请人地址： US TX Austin
- 专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L29/84
- IPC分类号： H01L29/84 ; H01L21/52
摘要：
A stress-isolated MEMS device (14) includes a platform (26) suspended over a substrate wafer (24). In one embodiment, the platform (26) is suspended by springs (38), but other suspension techniques may also be used. A transducer (28) is formed over the platform (26). The transducer (28) includes immovable portions (50) and movable portions (52). The transducer (28) and platform (26) are sealed within a cavity (62) formed within a cap support (30) between a cap wafer (32) and the substrate wafer (24). A leadframe (22) is affixed to the substrate wafer (24). The cap wafer (32) and other portions of the device (14) become embedded in a package material (20) so that a substantially solid boundary forms between the cap wafer (32) and the package material (20).
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