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发明申请
US20080290472A1 SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE 审中-公开
半导体层间绝缘膜形成组合物，其制备方法，膜形成方法和半导体器件

SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE
摘要：
Provided is a porous-film-forming composition containing silicon-oxide-based fine particles and a polysiloxane compound obtained by hydrolysis and condensation reactions, in the presence of an acid catalyst, of a hydrolyzable silane compound containing at least one tetrafunctional alkoxysilane compound represented by the following formula (1): Si(OR1)4   (1) wherein, R1s may be the same or different and each independently represents a linear or branched C1-4 alkyl group and/or at least one alkoxysilane compound represented by the following formula (2): R2nSi(OR3)4-n   (2) wherein, R2(s) may be the same or different when there are plural R2s and each independently represents a linear or branched C1-8 alkyl group, R3(s) may be the same or different when there are plural R3s and each independently represents a linear or branched C1-4 alkyl group, and n is an integer from 1 to 3 in the reaction mixture containing a large excess of water.
摘要（中）：

本发明提供一种多孔膜形成用组合物，其含有氧化硅系微粒和通过水解缩合反应得到的聚硅氧烷化合物，在酸催化剂的存在下，含有至少一种四官能性烷氧基硅烷化合物的水解性硅烷化合物 以下公式（1）：<？in-line-formula description =“In-line formula”end =“lead”？> Si（OR1）4（1）<？in-line-formula description =“In-line 式中，R 1可以相同或不同，各自独立地表示直链或支链C 1-4烷基和/或由下式（2）表示的至少一种烷氧基硅烷化合物： in-line-formula description =“In-line Formulas”end =“lead”？> R2nSi（OR3）4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail” 其中，当有多个R 2并且各自独立地表示直链或支链的C 1-8烷基时，R 2（s）可以相同或不同，R 3（s）可以相同或不同 当存在多个R 3并且各自独立地表示直链或支链C 1-4烷基时，并且n是含有大量过量水的反应混合物中n是1至3的整数。

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