发明申请
- 专利标题: Charge pump systems and methods
- 专利标题(中): 电荷泵系统和方法
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申请号: US11805765申请日: 2007-05-23
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公开(公告)号: US20080290931A1公开(公告)日: 2008-11-27
- 发明人: Hieu Van Tran , Sang Thanh Nguyen , Nasrin Jaffari , Hung Quoc Nguyen , Anh Ly
- 申请人: Hieu Van Tran , Sang Thanh Nguyen , Nasrin Jaffari , Hung Quoc Nguyen , Anh Ly
- 申请人地址: US CA Sunnyvale
- 专利权人: SILICON STORAGE TECHNOLOGY, INC.
- 当前专利权人: SILICON STORAGE TECHNOLOGY, INC.
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
Digital multilevel memory systems and methods include a charge pump for generating regulated high voltages for various memory operations. The charge pump may include a plurality of pump stages. Aspects of exemplary systems may include charge pumps that performs orderly charging and discharging at low voltage operation conditions. Additional aspects may include features that enable state by state pumping, for example, circuitry that avoids cascaded short circuits among pump stages. Each pump stage may also include circuitry that discharges its nodes, such as via self-discharge through associated pump interconnection(s). Further aspects may also include features that: assist power-up in the various pump stages, double voltage, shift high voltage levels, provide anti-parallel circuit configurations, and/or enable buffering or precharging features, such as self-buffering and self-precharging circuitry.
公开/授权文献
- US08232833B2 Charge pump systems and methods 公开/授权日:2012-07-31
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