发明申请
US20080298133A1 PROGRAM VERIFYING METHOD AND PROGRAMMING METHOD OF FLASH MEMORY DEVICE 有权
闪存存储器件的程序验证方法和编程方法

  • 专利标题: PROGRAM VERIFYING METHOD AND PROGRAMMING METHOD OF FLASH MEMORY DEVICE
  • 专利标题(中): 闪存存储器件的程序验证方法和编程方法
  • 申请号: US11965552
    申请日: 2007-12-27
  • 公开(公告)号: US20080298133A1
    公开(公告)日: 2008-12-04
  • 发明人: Ju In KIMJu Yeab LEE
  • 申请人: Ju In KIMJu Yeab LEE
  • 申请人地址: KR Icheon-s
  • 专利权人: Hynix Semiconductor Inc.
  • 当前专利权人: Hynix Semiconductor Inc.
  • 当前专利权人地址: KR Icheon-s
  • 优先权: KR10-2007-0051525 20070528
  • 主分类号: G11C16/34
  • IPC分类号: G11C16/34 G11C16/10
PROGRAM VERIFYING METHOD AND PROGRAMMING METHOD OF FLASH MEMORY DEVICE
摘要:
A duel program verify operation is performed using first and second verify voltages. In order to reduce the width of a threshold voltage distribution during an incremental step pulse program implementation, data of a corresponding memory cell are verified twice using the first verify voltage and the second verify voltage. During a second verify operation using the second verify voltage, a sensing current is adjusted by controlling voltages applied as a bit line select signal and an evaluation time period. Therefore, the threshold voltage of the memory cell can be measured higher or lower than its actual value and the width of a threshold voltage distribution is reduced.
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